Abstract:III-nitrides and related alloys are widely used for optoelectronics and as acoustic resonators. Ferroelectric wurtzite nitrides are of particular interest because of their potential for direct integration with Si and wide bandgap semiconductors and unique polarization switching characteristics; such interest has taken off since the first report of ferroelectric Al1−xScxN alloys. However, the coercive fields needed to switch polarization are on the order of MV/cm, which are 1–2 orders of magnitude larger than oxide perovskite ferroelectrics. Atomic-scale point defects are known to impact the dielectric properties, including breakdown fields and leakage currents, as well as ferroelectric switching. However, very little is known about the native defects and impurities in Al1−xScxN and their effect on the dielectric and ferroelectric properties. In this study, we use first-principles calculations to determine the formation energetics of native defects and unintentional oxygen incorporation and their effects on the polarization switching barriers in Al1−xScxN alloys. We find that nitrogen vacancies are the dominant native defects, and unintentional oxygen incorporation on the nitrogen site is present in high concentrations. They introduce multiple mid-gap states that can lead to premature dielectric breakdown and increased temperature-activated leakage currents in ferroelectrics. We also find that nitrogen vacancy and substitutional oxygen reduce the switching barrier in Al1−xScxN at low Sc compositions. The effect is minimal or even negative (increases barrier) at higher Sc compositions. Unintentional defects are generally considered to adversely affect ferroelectric properties, but our findings reveal that controlled introduction of point defects by tuning synthesis conditions can instead benefit polarization switching in ferroelectric Al1−xScxN at certain compositions.

Stress Effect on the Leakage Current Distribution of Ferroelectric Al0.7Sc0.3N Across the Wafer

Modification of the phonon thermal conductivity in spatially confined semiconductor nanofilms under stress fields

Effects of Heterogeneity and Prestress Field on Phonon Properties of Semiconductor Nanofilms

Stress field effects on phonon properties in spatially confined semiconductor nanostructures

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Low Leakage Ferroelectric Heteroepitaxial Al$_{0.7}$Sc$_{0.3}$N Films on GaN

Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al$_{0.65}$Sc$_{0.35}$N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk

Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN

Lateral Superlattice - A Possible Origin of the Large Leakage Current in Al1-xScxN

A Landau–Devonshire analysis of strain effects on ferroelectric Al1−xScxN

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Defects and Oxygen Impurities in Ferroelectric Wurtzite Al$_{1-x}$Sc$_x$N Alloys

Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films

Study of Local Stress Using Stress-Absorbing Si Diaphragm

Strain Tuning on Van Der Waals Negative Capacitance Transistors

Defects and oxygen impurities in ferroelectric wurtzite Al1− x Sc x N alloys

Effects of Applying Stress on the Electron Field Emission Properties in Amorphous Carbon Thin Films

Stress effects in ferroelectric thin films

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures