Abstract:This review highlights Al1−xScxN as a groundbreaking wurtzite ferroelectric with exceptional properties, including large polarization, tunable coercive field, outstanding thermal stability, and compatibility with CMOS/III‐N technologies. It explores the origins of its ferroelectricity, phase stability, and control mechanisms, discusses challenges such as high operating voltages and leakage currents, and outlines future development directions, emphasizing its potential for advanced applications. Al1−xScxN emerges as a revolutionary ferroelectric material within the III‐N family. It combines exceptional switchable polarization (80–165 μC cm−2), highly tunable coercive fields (1.5–6.5 MV cm−1), and a wide bandgap (4.9–5.6 eV). Unlike conventional ferroelectrics, Al1−xScxN exhibits remarkable compatibility with both CMOS and III‐N technologies. It can be fabricated on plastic substrates at low temperatures, demonstrating excellent flexibility and biocompatibility. Remarkably, Al1−xScxN maintains superior performance in harsh environments due to its outstanding thermal stability (up to 1100 °C). These unique characteristics position Al1−xScxN as a highly promising candidate for a wide range of applications, including high‐performance memory, in‐memory computing, neuromorphic computing, and next‐generation wearable and implantable devices, particularly for operation in complex environments. Despite its potential, Al1−xScxN faces challenges such as high coercive fields, significant leakage currents, and limited polarization reversal cycle life. Addressing these challenges require a deeper understanding of the fundamental physics controlling Al1−xScxN films. This review explores the origins of Al1−xScxN's ferroelectricity and phase stability, delves into the fundamental theory of wurtzite ferroelectricity, investigates mechanisms for controlling spontaneous polarization and coercive fields, examines recent research progress in Al1−xScxN ferroelectric devices, and outlines future development directions for this exciting material.

Lateral Superlattice - A Possible Origin of the Large Leakage Current in Al1-xScxN

Effect of Sc spatial distribution on the electronic and ferroelectric properties of AlScN

Study of the Leakage Current Mechanism in Schottky Contacts to Al0.25Ga0.75N/GaN Heterostructures with AlN Interlayers

Effects of Sc on the Vacancy and Solute Behaviours in Aluminium

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Alo.25Gao.75N/AlN/GaN heterostructures

Low Leakage Ferroelectric Heteroepitaxial Al$_{0.7}$Sc$_{0.3}$N Films on GaN

Stress Effect on the Leakage Current Distribution of Ferroelectric Al0.7Sc0.3N Across the Wafer

Defects and Oxygen Impurities in Ferroelectric Wurtzite Al$_{1-x}$Sc$_x$N Alloys

First-Principles Study of nAlN/nScN Superlattices with High Dielectric Capacity for Energy Storage

Defects and oxygen impurities in ferroelectric wurtzite Al1− x Sc x N alloys

Piezoelectric effect and polarization switching in Al$_{1-x}$Sc$_x$N

A Landau–Devonshire analysis of strain effects on ferroelectric Al1−xScxN

Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al$_{0.65}$Sc$_{0.35}$N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk

Why Does AlScN Appear to Be the Best Choice for IIIA-VA-based Wurtzite Ferroelectrics?

High Conductive Gate Leakage Current Channels Induced by in Segregation Around Screw- and Mixed-Type Threading Dislocations in Lattice-Matched InxAl1−xN/GaN Heterostructures

Microscopic Insights into Fatigue Mechanism in Wurtzite Ferroelectric Al_0.65Sc_0.35N: Oxygen Infiltration Enabled Grain Amorphization Spanning Boundary to Bulk

Physics of Ferroelectric Wurtzite Al1−xScxN Thin Films

Optical Phonon Modes in Al1−xScxN

Towards higher electro-optic response in AlScN

Effect of AlN interlayer thickness on leakage currents in Schottky contacts to Al0.25Ga0.75N/AlN/GaN heterostructures

Improved Leakage Currents and Polarity Control through Oxygen Incorporation in Ferroelectric Al0.73Sc0.27N Thin Films