Abstract:The ability to minimize the thermal conductivity of dielectrics with minimal structural intervention that could affect electrical properties is an important capability for engineering thermoelectric efficiency in low-cost materials such as Si. We recently reported the discovery of special arrangements for nanoscale pores in Si that produce a particularly large reduction in thermal conductivity accompanied by strongly anticorrelated heat current fluctuations, a phenomenon that is missed by the diffuse adiabatic boundary conditions conventionally used in numerical Boltzmann transport models. This manuscript presents the results of molecular dynamics simulations and a Monte Carlo ray tracing model that teases apart this phenomenon to reveal that special pore layouts elastically backscatter long-wavelength heat-carrying phonons. This means that heat carriage by a phonon before scattering is undone by the scattered phonon, resulting in an effective mean-free-path that is significantly shorter than the geometric line-of-sight to the pores. This effect is particularly noticeable for the long-wavelength, long mean-free-path phonons whose transport is impeded drastically more than is expected purely from the usual considerations of scattering defined by the distance between defects. This super-suppression of the mean-free-path below the characteristic length scale of the nanostructuring offers a route for minimizing thermal conductivity with minimal structural impact, while the stronger impact on long wavelengths offers possibilities for the design of band-pass phonon filtering. Moreover, the ray tracing model developed in this paper shows that different forms of correlated scattering imprint a unique signature in the heat current autocorrelation function that could be used as a diagnostic in other nanostructured systems.

Stress field effects on phonon properties in spatially confined semiconductor nanostructures

Modification of the phonon thermal conductivity in spatially confined semiconductor nanofilms under stress fields

Effects of Pre-Stress and Surface Stress on Phonon Thermal Conductivity of Rectangular Si Nanowires

Influence of pre-stress fields on electric properties of semiconductor nanowires

Effects of Heterogeneity and Prestress Field on Phonon Properties of Semiconductor Nanofilms

Electron–acoustic Phonon Interaction and Mobility in Stressed Rectangular Silicon Nanowires

Influence of Surface/interface Stress on Thermal Conductivity of Stressed GaN Nanofilms

Strain/Stress-Engineering in Phonon Properties of Streesed Semiconductor Nanowires

Influence of Prestress Fields on the Phonon Thermal Conductivity of GaN Nanostructures

Phonon Properties and Thermal Conductivity of GaN Nanofilm under Prestress and Surface/interface Stress

Effects Of Surface Stress On The Phonon Properties In Gan Nanofilms

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Simulating Stress-Tunable Phonon and Thermal Properties in Heterostructured AlN/GaN/AlN-nanofilms

Effect of Stress-Dependent Thermal Conductivity on Thermo-Mechanical Coupling Behavior in GaN-Based Nanofilm under Pulse Heat Source

Modeling Phonon Thermal Conductivity in Spatially Confined GaN Nanofilms under Stress Fields and Phonon Surface Scattering

Surface Stress Effects On The Yield Strength In Nanotwinned Polycrystal Face-Centered-Cubic Metallic Nanowires

Molecular Dynamics Simulation of the Elastic Properties of Metal Nanowires in a Transverse Electric Field

Super-Suppression of Long Phonon Mean-Free-Paths in Nano-engineered Si due to Heat Current Anticorrelations

Effect of Mechanical Strain on the Optical Properties of Nodal‐Line Semimetal ZrSiS

Phonon Confinement in Stressed Silicon Nanocluster

Size Effect on Raman Measured Stress and Strain Induced Phonon Shifts in Ultra-Thin Film Silicon