High Quality Epitaxial Piezoelectric and Ferroelectric Wurtzite Al1- xScxN Thin Films

Yang Zeng,Yihan Lei,Yanghe Wang,Mingqiang Cheng,Luocheng Liao,Xuyang Wang,Jinxin Ge,Zhenghao Liu,Wenjie Ming,Chao Li,Shuhong Xie,Jiangyu Li,Changjian Li
DOI: https://doi.org/10.1002/smtd.202400722
IF: 12.4
2024-08-09
Small Methods
Abstract:Piezoelectric and ferroelectric wurtzite are promising to reshape modern microelectronics because they can be easily integrated with mainstream semiconductor technology. Sc doped AlN (Al1- xScxN) has attracted much attention for its enhanced piezoelectric and emerging ferroelectric properties, yet the commonly used sputtering results in polycrystalline Al1- xScxN films with high leakage current. Here, the pulsed laser deposition of single crystalline epitaxial Al1- xScxN thin films on sapphire and 4H-SiC substrates is reported. Pure wurtzite phase is maintained up to x = 0.3 with ≤0.1 at% oxygen contamination. Polarization is estimated to be 140 µC cm-2 via atomic scale microscopy imaging and found to be switchable via a scanning probe. The piezoelectric coefficient is found to be five times of the undoped one when x = 0.3, making it desirable for high-frequency radiofrequency (RF) filters and 3D nonvolatile memories.
What problem does this paper attempt to address?