Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Carrier Recombination Processes in In-polar N-Inn in Regions of Low Residual Electron Density

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Time-resolved Spectroscopy of Recombination and Relaxation Dynamics in InN

Photoluminescence of N‐inn with Low Electron Concentrations

Energy-Dependent Time-Resolved Photoluminescence of Self-Catalyzed InN Nanocolumns

Manifestation of the equilibrium hole distribution in photoluminescence of n-InN

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Localized Exciton Dynamics in AlInGaN Alloy

Photoluminescence Investigation of the Carrier Recombination Processes in Zno Quantum Dots and Nanocrystals

Carrier Recombination in Nitride-Based Light-Emitting Devices: Multiphonon Processes, Excited Defects, and Disordered Heterointerfaces

Acceptor States in the Photoluminescence Spectra of N-Inn

Study on the Photoluminescence Properties of Inn Films

Photoluminescence of Dislocations in Nitrogen Doped Czochralski Silicon

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Carrier-induced transient defect mechanism for non-radiative recombination in InGaN light-emitting devices

Ultrafast Recombination in Si-doped InN

Photoluminescence and Absorption in InGaN Films with InN Segregation

Effects of Dislocations on Electron Transport in Wurtzite InN

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Phonon Polariton of InN Observed by Infrared Synchrotron Radiation