Abstract:Knowledge of the carrier recombination, relaxation, and transport processes in InN materials is essential for determining the applicability of this material system in photonic and electronic applications. In this article, we provide a review of time-resolved spectroscopy experimental techniques and our recent results using these techniques to measure transient processes in InN. Specifically, subpicosecond differential transmission experiments were used to determine the carrier recombination lifetime and the carrier thermalization time of InN. In those experiments, we observed a fast initial hot carrier cooling followed by a slower recombination process. At short times after pulsed excitation, modeling of the observed relaxation suggests that the dominant energy relaxation process is longitudinal optical phonon scattering modified by a strong hot phonon effect at room temperature. An inverse proportionality between the carrier lifetime and the free electron concentration was found. This suggests that donor-like defects or impurities may stimulate the formation of non-radiative recombination centers. Furthermore, we report the measurements of in-plane carrier transport and hole mobility of an InN epilayer by time-resolved transient grating spectroscopy using subpicosecond pulses at 800 nm and ~1900 nm for grating writing and probing, respectively. The ambipolar diffusion coefficient Da = 2.0 cm2/s and hole mobility µh = 39 cm2/Vs at 300 K near the InN surface were determined by monitoring the transient grating kinetics at various grating periods.

Ultrafast Recombination in Si-doped InN

Time-resolved Spectroscopy of Recombination and Relaxation Dynamics in InN

Ultrafast dynamics of electronic structure in InN thin film

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy

Ultrafast carrier dynamics in InN epilayers

Terahertz Emission From Silicon And Magnesium Doped Indium Nitride

Optical Nonlinearities of InN by Reflection Z-scan Technique

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Carrier Recombination Processes in In-polar N-Inn in Regions of Low Residual Electron Density

Ultrafast Bulk Carrier Recombination Transients in N-Type and Semi-Insulating 4H-Sic Crystals

Electron-beam-induced current evidence for room-temperature photoluminescence of silicon pn diode

Ultrafast Exciton Dynamics in Silicon Nanowires

Terahertz Emission by InN

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

On the Nature of Radiative Recombination in GaAsN

Subpicosecond Carrier Lifetime in InP

Laser effects in indium nitride film

Ultrafast Raman Scattering Studies of Electron Transport in A Thick Inn Film Grown on Gan

Radiation efficiency of heavily doped bulk n-InP semiconductor

Recombination rate analysis in long minority carrier lifetime mid-wave infrared InGaAs/InAsSb superlattices