Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate
Huapeng Liu,Bowen Sheng,Tao Wang,Konstantin Kudryavtsev,Artem Yablonskiy,Jiaqi Wei,Ali Imran,Zhaoying Chen,Ping Wang,Xiantong Zheng,Renchun Tao,Xuelin Yang,Fujun Xu,Weikun Ge,Bo Shen,Boris Andreev,Xinqiang Wang
DOI: https://doi.org/10.1016/j.fmre.2021.09.020
2021-01-01
Fundamental Research
Abstract:Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm−2 at T = 8 and 77 K, respectively. To achieve such a low threshold power density, vicinal GaN substrates were used to reduce the edge-component threading dislocation (ETD) density of the InN film. Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps, and the ETD density can be reduced to approximately 5 × 108 cm−2 near the surface of the 5-µm-thick film. The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film. As a result, the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated.