Temperature Dependence of Terahertz Properties for InP

Caihong Zhang,Yuanyuan Wang,Jinlong Ma,Biaobing Jin,Weiwei Xu,Lin Kang,Jian Chen,Peiheng Wu,Masayoshi Tonouchi
DOI: https://doi.org/10.1117/12.821683
2008-01-01
Abstract:Terahertz (THz) time-domain spectroscopy (TDS) is attracting more and more attention recently, and has been growing up as a powerful technique for measuring the material parameters. Indium phosphide (InP), which with short carrier average collision time, high band-gap energy and low effective mass, is growing up as one of the best photoconductive materials for emitting and detecting THz waves. An n-type InP of 0.35 Ω•cm was measured with normal transmitted TDS system for the temperature and frequency ranges of 4.2 - 300 K and 0.2 - 4 THz, respectively. THz beam was placed in a closed box purged with dry nitrogen gas, and the sample was mounted in a MicrostatHe cryostat made by Oxford Instruments. Temperature dependence of THz properties for InP as a function of frequency was characterized.
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