Noncontact Evaluation of Nondoped Inp Wafers by Terahertz Time-Domain Spectroscopy

Caihong Zhang,Biaobing Jin,Jian Chen,Peiheng Wu,Masayoshi Tonouchi
DOI: https://doi.org/10.1364/josab.26.0000a1
2009-01-01
Abstract:Terahertz (THz) time-domain spectroscopy is used as a noncontact method to evaluate a nondoped indium phosphide (InP) wafer for the temperature and frequency ranges of 4.2-300 K and 0.2-4 THz, respectively. The strongly temperature- and frequency-dependent optical constants of the complex refractive index and complex conductivity were observed in the THz region, which were fitted and analyzed with a simple Drude model. The temperature dependence of the carrier density and scattering time are also presented. The shallow donors of impurities are discussed with the obtained results. (C) 2009 Optical Society of America
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