High Operation Temperature Mid-Wavelength Interband Cascade Infrared Photodetectors Grown On Inas Substrate

Yi Zhou,Jianxin Chen,Zhicheng Xu,Li He
DOI: https://doi.org/10.1117/12.2225131
2016-01-01
Abstract:In recent years, interband cascade detectors (ICIP) based on typer-II superlattice have shown great performance potential at high operation temperature. In this paper, we report our studies on mid-infrared interband cascade photodetectors first grown on InAs substrate. We examined the photo-generated carriers' transport in ICIP structures by comparing three detectors grown on InAs substrate. The 2-stages ICIP device has demonstrated a high quantum efficiency around 20% at room temperature. The dark current density of the 2-stages ICIP device at -0.05V is as low as 1 nA at 80K, 1 mA at 150K, which is comparable to the state of art PIN super lattice photo detectors with similar cutoff wavelength. The Johnson-noise limited D* reaches 1.64 x 10(14) cm. Hz(1/2)/W at 3.65 mu m and 80K, and 4.1 x 10(10)cm. Hz(1/2)/W at 3.8 mu m and 200K. The 300 K background limited infrared performance (BLIP) operation temperature is estimated to be over 140 K.
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