Abstract:Charge-sensitive infrared phototransistors (CSIPs) with a 16×4 μm2 active area, which are fabricated in a GaAs/AlGaAs double-quantum-well structure, are studied with an all-cryogenic spectrometer operated at 4.2 K. Extremely low level of background radiation makes reliable determination of detector characteristics at 4.2 K possible: The detection band is found to be centered at the wavelength λ=14.7 μm with a bandwidth (full width at maximum) Δλ=1 μm. The quantum efficiency (η), the current responsivity (R), the noise equivalent power (NEP), and the specific detectivity (D∗) are derived to be η=(2±0.5)%, R=4×104–4×106 A/W, NEP≅6.8×10−19 W/Hz1/2, and D∗≅1.2×1015 cm Hz1/2/W. The dynamic range of detection is demonstrated to exceed 106 (approximately attowatts to picowatts), but the upper limit of the radiation power is limited by the radiation source intensity. The intrinsic dynamic range of the detector is suggested to reach 1013 (approximately attowatts to microwatts). The detection speed is suggested to be around 3 ns (300 MHz). The sensitivity of CSIPS is so high that single-photon signals are discerned in the photocurrent as stepwise increases in given amplitude. The value of D∗ is by a few orders of magnitude higher than that of the state-of-the-art multi-quantum-well infrared photodetectors. The extremely high sensitivity will open up the possibility of developing ultrahigh-speed imaging and/or ultrahigh-resolution passive microscopy system in the long wavelength infrared region.

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Temperature Dependence of Novel Single-Photon Detectors in the Long-Wavelength Infrared Range

A Sensitive Double Quantum Well Infrared Phototransistor

Charge-sensitive Infrared Phototransistors: Characterization by an All-Cryogenic Spectrometer

Above-77 K operation of charge sensitive infrared phototransistor with dynamically controlled optical gate

High Performance Ternary Organic Phototransistors with Photoresponse Up to 2600 Nm at Room Temperature

Characteristics of high-operating-temperature InAs∕GaAs quantum-dot infrared detectors

The Temperature-Dependent Photoresponse Uniformity of an Ingaas Subpixels Infrared Detector by the Lbic Technique

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Performance of the Multiquantum Well Infrared Photodetector

Temperature-dependent photodetection behavior of AlGaN/GaN-based ultraviolet phototransistors

Temperature Dependence of Current–voltage Characteristics of Terahertz Quantum-Well Photodetectors

Dual-color charge-sensitive infrared phototransistors with dynamic optical gate

High Temperature Behaviors of 1–2.5 Μm Extended Wavelength In₀.₈₃Ga₀.₁₇As Photodetectors on InP Substrate

Temperature-Dependent Charge Carrier Transfer in Colloidal Quantum Dot/Graphene Infrared Photodetectors

High-Temperature Performance of the 4H-Sic N-P-n Bipolar UV Phototransistor

A Simple Numerical Model to Estimate the Temperature Distributions Over Photodetectors in Steady-State

The influence of substrate temperature on the near-infrared absorption and carrier mobility of lead phthalocyanine phototransistors

Infrared Phototransistor Using Capacitively Coupled Two-Dimensional Electron Gas Layers

Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in <formula formulatype="inline"> <tex>$\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$</tex></formula> Multiple Quantum Dot Photodetector

Analysis of Temperature-Dependent Characteristics of a 4H-Sic Metal-Semiconductor-metal Ultraviolet Photodetector