Abstract:Abstract Due to thermal carriers generated by a narrow mid-infrared energy gap, cooling is always necessary to achieve ideal photodetection. In quantum dot (QD), the electron thermal generation should be reduced with quantum confinement in all three dimensions. As a result, there would be a great potential to realize high-operating-temperature (HOT) QD mid-IR photodetectors, though not yet achieved. Taking the advantages of colloidal nanocrystals’ solution processability and precise doping control by surface dipoles, this work demonstrates a HOT mid-infrared photodetector with a QD gradient homojunction. The detector achieves background-limited performance with D * = 2.7 × 10 11 Jones on 4.2 μm at 80 K, above 10 11 Jones until 200 K, above 10 10 Jones until 280 K, and 7.6 × 10 9 Jones on 3.5 μm at 300 K. The external quantum efficiency also achieves more than 77% with responsivity 2.7 A/W at zero bias. The applications such as spectrometers, chemical sensors, and thermal cameras, are also approved, which motivate interest in low-cost, solution-processed and high-performance mid-infrared photodetection beyond epitaxial growth bulk photodetectors.

Characteristics of high-operating-temperature InAs∕GaAs quantum-dot infrared detectors

High-detectivity, normal-incidence, mid-infrared (λ∼4 μm)InAs/GaAs quantum-dot detector operating at 150 K

GaAs/AlGaAs Quantum-Well Infrared Photodetectors on GaAs-on-Si Substrates

High Temperature Terahertz Response In A P-Type Quantum Dot-In-Well Photodetector

Dual Broadband Photodetector Based on Interband and Intersubband Transitions in InAs Quantum Dots Embedded in Graded InGaAs Quantum Wells

High-responsivity operation of quantum cascade detectors at 9 µm

High performance photodiodes based on InAs/InAsSb type-II superlattices for very long wavelength infrared detection

Characteristics Of Ingaas Quantum Dot Infrared Photodetectors

A Sensitive Double Quantum Well Infrared Phototransistor

Short Wavelength (1–4 Μm) Infrared Detectors Using Intersubband Transitions in GaAs-based Quantum Wells

High Responsivity, Dual-Band Response and Intraband Avalanche Multiplication in InGaAs/InP Quantum Well Photodetectors

High Operating Temperature Split-Off Band Infrared Detectors

High-operating-temperature mid-infrared photodetectors via quantum dot gradient homojunction

A GaN/AlN Quantum Cascade Detector with a Broad Response from the Mid-Infrared (4.1 Μ M) to the Visible (550 Nm) Spectral Range

Operating Temperature and the Responsivity of Split-off Band Detectors

&Lt;title>high-Performance GaAs Homojunction Far-Infrared Detectors</title>

QWIPs DESIGNED FOR HIGH ABSORPTION AND HIGH OPERATING TEMPERATURE

Multi-color Photoresponse Based on Interband and Intersubband Transitions in InAs and InGaAs Quantum Dot Photodetectors

Room Temperature Near-Infrared Photoresponse Based on Interband Transitions in <formula formulatype="inline"> <tex>$\hbox{In}_{0.35}\hbox{Ga}_{0.65}\hbox{As}$</tex></formula> Multiple Quantum Dot Photodetector

Temperature Dependence of the Performance of Charge-Sensitive Infrared Phototransistors

Molecular Beam Epitaxy Growth and Characteristics of the High Quantum Efficiency InAs/GaSb Type-Ii Superlattices MWIR Detector