Dual Broadband Photodetector Based on Interband and Intersubband Transitions in InAs Quantum Dots Embedded in Graded InGaAs Quantum Wells

Brandon S. Passmore,Jiang Wu,M. O. Manasreh,G. J. Salamo
DOI: https://doi.org/10.1063/1.2822412
IF: 4
2007-01-01
Applied Physics Letters
Abstract:Two broadband photoresponse from InAs quantum dots embedded in graded InGaAs quantum well photodetectors were observed in the spectral regions of 4–12μm (midinfrared band) and 0.5–1.0μm (near-infrared-visible band). The midinfrared band is attributed to the intersubband transitions within the quantum dots and was observed at temperatures less than 80K. The near-infrared-visible band is attributed to interband transitions and is observed in the temperature range of 77–300K. The room temperature detectivity of the near-infrared-visible band is estimated to be on the order of ∼3.0×108cmHz∕W with a bias voltage less than 1.0V.
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