Sequential Co‐Passivation in InAs Colloidal Quantum Dot Solids Enables Efficient Near‐Infrared Photodetectors
Pan Xia,Bin Sun,Margherita Biondi,Jian Xu,Ozan Atan,Muhammad Imran,Yasser Hassan,Yanjiang Liu,Joao M. Pina,Amin Morteza Najarian,Luke Grater,Koen Bertens,Laxmi Kishore Sagar,Husna Anwar,Min‐Jae Choi,Yangning Zhang,Minhal Hasham,Sjoerd Hoogland,Edward H. Sargent,F. Pelayo Garcìa de Arquer,Mark W.B. Wilson
DOI: https://doi.org/10.1002/adma.202301842
IF: 29.4
2023-05-13
Advanced Materials
Abstract:III‐V colloidal quantum dots (CQDs) are promising materials for optoelectronic applications, for they avoid heavy metals while achieving absorption spanning the visible to the infrared. However, the covalent nature of III‐V CQDs requires the development of new passivation strategies to fabricate conductive CQD solids for optoelectronics: we show herein that ligand exchanges, previously developed in II‐VI and IV‐VI quantum dots and employing a single ligand, do not fully passivate CQDs, and that this curtails device efficiency. Guided by density functional theory (DFT) simulations, we develop a co‐passivation strategy to fabricate indium arsenide CQD photodetectors, an approach that employs the combination of X‐type methyl ammonium acetate (MaAc) and Z‐type ligands InBr3. This approach maintains charge carrier mobility and improves passivation, seen in a 25% decrease in Stokes shift, a four‐fold reduction in the rate of first‐exciton absorption linewidth broadening over time‐under‐stress, and leads to a doubling in photoluminescence lifetime. The resulting devices show 37% external quantum efficiency at 950 nm, the highest value reported for InAs CQD photodetectors. This article is protected by copyright. All rights reserved
materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,nanoscience & nanotechnology