One-pot heat-up synthesis of short-wavelength infrared, colloidal InAs quantum dots

J. Lee,T. Zhao,S. Yang,M. Muduli,C. B. Murray,C. R. Kagan

DOI: https://doi.org/10.1063/5.0187162

IF: 4.304

2024-02-21

The Journal of Chemical Physics

Abstract:III–V colloidal quantum dots (QDs) promise Pb and Hg-free QD compositions with which to build short-wavelength infrared (SWIR) optoelectronic devices. However, their synthesis is limited by the availability of group-V precursors with controllable reactivities to prepare monodisperse, SWIR-absorbing III–V QDs. Here, we report a one-pot heat-up method to synthesize ∼8 nm edge length (∼6.5 nm in height) tetrahedral, SWIR-absorbing InAs QDs by increasing the [In3+]:[As3+] ratio introduced using commercially available InCl3 and AsCl3 precursors and by decreasing the concentration and optimizing the volume of the reducing reagent superhydride to control the concentration of In(0) and As(0) intermediates through QD nucleation and growth. InAs QDs are treated with NOBF4, and their deposited films are exchanged with Na2S to yield n-type InAs QD films. We realize the only colloidal InAs QD photoconductors with responsivity at the technologically important wavelength of 1.55 μm.

chemistry, physical,physics, atomic, molecular & chemical

What problem does this paper attempt to address?

This paper aims to solve the problem of how to synthesize short - wave infrared (SWIR) - absorbing colloidal InAs quantum dots (QDs) through a simple and controllable method. Specifically, the paper explores achieving precise control of the size and shape of InAs quantum dots by adjusting reaction conditions (such as the precursor concentration ratio \([In^{3+}]:[As^{3+}]\), the concentration and volume of the reducing agent superhydride, reaction time and temperature, etc.), thereby obtaining high - quality InAs quantum dots with a longer absorption wavelength.

The paper points out that traditional InAs quantum dot synthesis methods have some limitations, such as the need to use toxic or flammable arsenic precursors and the difficulty in controlling the monodispersity and absorption wavelength of quantum dots. To overcome these challenges, the research team developed a "one - pot heat - up" synthesis method. By using commercially available indium chloride (\(InCl_3\)) and arsenic chloride (\(AsCl_3\)) precursors, combined with an optimized superhydride reducing agent, tetrahedral InAs quantum dots with a side length of about 8 nanometers (about 6.5 nanometers in height) were successfully synthesized. These quantum dots exhibit good absorption properties in the short - wave infrared region (especially at the technically important wavelength of 1.55 micrometers).

In addition, the paper also introduces the removal of surface oxides by \(NOBF_4\) treatment and further improvement of the charge - transport properties of quantum dot films through \(Na_2S\) exchange. Eventually, the preparation of n - type InAs quantum dot photoconductors was achieved. These devices show significant responsiveness at a wavelength of 1.55 micrometers, meet the requirements of the RoHS directive, and do not contain the easily oxidized and unstable Sb element.

Overall, this research not only provides a new method for synthesizing high - quality InAs quantum dots but also lays the foundation for the development of high - performance short - wave infrared optoelectronic devices based on these quantum dots.