Dicarboxylic Acid‐Assisted Surface Oxide Removal and Passivation of Indium Antimonide Colloidal Quantum Dots for Short‐Wave Infrared Photodetectors

Yangning Zhang,Pan Xia,Benjamin Rehl,Darshan H. Parmar,Dongsun Choi,Muhammad Imran,Yiqing Chen,Yanjiang Liu,Maral Vafaie,Chongwen Li,Ozan Atan,Joao M. Pina,Watcharaphol Paritmongkol,Larissa Levina,Oleksandr Voznyy,Sjoerd Hoogland,Edward Hartley Sargent

DOI: https://doi.org/10.1002/anie.202316733

2024-01-05

Angewandte Chemie International Edition

Abstract:Heavy-metal-free III-V colloidal quantum dots (CQDs) are promising materials for solution-processed short-wave infrared (SWIR) photodetectors. Recent progress in the synthesis of indium antimonide (InSb) CQDs with sizes smaller than the Bohr exciton radius enables quantum-size effect tuning of the bandgap. However, it has been challenging to achieve uniform InSb CQDs with bandgaps below 0.9 eV, as well as to control the surface chemistry of these large-diameter CQDs. This has, to date, limited the development of InSb CQD photodetectors that are sensitive to >=1400 nm light. Here we adopt solvent engineering to facilitate a diffusion-limited growth regime, leading to uniform CQDs with a bandgap of 0.89 eV. We then develop a CQD surface reconstruction strategy that employs a dicarboxylic acid to selectively remove the native In/Sb oxides, and enables a carboxylate-halide co-passivation with the subsequent halide ligand exchange. We find that this strategy reduces trap density by half compared to controls, and enables electronic coupling among CQDs. Photodetectors made using the tailored CQDs achieve an external quantum efficiency of 25% at 1400 nm, the highest among III-V CQD photodetectors in this spectral region.

chemistry, multidisciplinary

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to improve the performance of indium antimonide (InSb) colloidal quantum dots (CQDs) in short - wave infrared (SWIR) photodetectors, especially to improve their sensitivity to 1400 - nm light. Specifically, the paper focuses on the following key issues:

1. **Synthesis of uniform large - diameter InSb CQDs**:
- The paper points out that it is very challenging to synthesize InSb CQDs with a uniform size distribution and a bandgap lower than 0.9 eV. Due to the covalent nature of InSb CQDs, their synthesis process depends on highly reactive precursors, strong reducing agents, and high - temperature conditions, which lead to non - uniformity with a size distribution exceeding 10%. This non - uniformity will have an adverse effect on device performance.

2. **Control of surface chemistry and electronic structure**:
- InSb CQDs are prone to form oxides on the surface, and these oxides will form barriers to charge transport and introduce surface trap states. These problems limit the application of InSb CQDs in photodetectors. Therefore, the paper is committed to developing an effective surface treatment strategy to remove these oxides and reduce surface defects.

3. **Improvement of photodetector performance**:
- The goal of the paper is to prepare high - performance SWIR photodetectors by optimizing the synthesis and surface treatment methods of InSb CQDs. Specific goals include reducing dark current, increasing external quantum efficiency (EQE), and specific detectivity.

To achieve these goals, the paper adopts the following strategies:

- **Solvent engineering**: By introducing the non - coordinating solvent heptadecane to promote diffusion - limited growth, InSb CQDs with a narrower size distribution are obtained.
- **Surface reconstruction**: Using maleic acid (MA) as an etchant to selectively remove surface oxides, and through the subsequent halogen exchange step to achieve carboxylate - halogen co - passivation, enhancing the electronic coupling between quantum dots.

Through these methods, the paper has successfully prepared uniform InSb CQDs with a bandgap of 0.89 eV and achieved a photodetector with an EQE of 25% at 1400 nm, which is one of the highest performance indicators in III - V group CQD photodetectors at present.