Direct Observation of Early-stage Quantum Dot Growth Mechanisms with High-temperature Ab Initio Molecular Dynamics

Lisi Xie,Qing Zhao,Klavs F. Jensen,Heather J. Kulik

DOI: https://doi.org/10.48550/arXiv.1512.08565

2015-12-29

Abstract:Colloidal quantum dots (QDs) exhibit highly desirable size- and shape-dependent properties for applications from electronic devices to imaging. Indium phosphide QDs have emerged as a primary candidate to replace the more toxic CdSe QDs, but production of InP QDs with the desired properties lags behind other QD materials due to a poor understanding of how to tune the growth process. Using high-temperature ab initio molecular dynamics (AIMD) simulations, we report the first direct observation of the early stage intermediates and subsequent formation of an InP cluster from separated indium and phosphorus precursors. In our simulations, indium agglomeration precedes formation of In-P bonds. We observe a predominantly intercomplex pathway in which In-P bonds form between one set of precursor copies while the carboxylate ligand of a second indium precursor in the agglomerated indium abstracts a ligand from the phosphorus precursor. This process produces an indium-rich cluster with structural properties comparable to those in bulk zinc-blende InP crystals. Minimum energy pathway characterization of the AIMD-sampled reaction events confirms these observations and identifies that In-carboxylate dissociation energetics solely determine the barrier along the In-P bond formation pathway, which is lower for intercomplex (13 kcal/mol) than intracomplex (21 kcal/mol) mechanisms. The phosphorus precursor chemistry, on the other hand, controls the thermodynamics of the reaction. Our observations of the differing roles of precursors in controlling QD formation strongly suggests that the challenges thus far encountered in InP QD synthesis optimization may be attributed to an overlooked need for a cooperative tuning strategy that simultaneously addresses the chemistry of both indium and phosphorus precursors.

Materials Science

What problem does this paper attempt to address?

The problem that this paper attempts to solve is to understand the early growth mechanism of indium phosphide quantum dots (InP QDs), especially the initial intermediates of InP clusters formed in the precursor mixture and their subsequent formation processes. Indium phosphide quantum dots are considered as an ideal material to replace cadmium selenide quantum dots because of their low toxicity and similar electronic and optical properties to cadmium selenide quantum dots. However, the current synthesis methods of InP QDs have not yet reached the level of cadmium selenide quantum dots in terms of size distribution, quantum yield and stability, mainly due to the insufficient understanding of how to adjust the growth process to obtain the desired properties.

To overcome these challenges, the authors used high - temperature ab initio molecular dynamics (AIMD) simulations to directly observe for the first time the early - stage intermediates of InP clusters formed from separated indium and phosphorus precursors. It was found that during the simulation, the aggregation of indium preceded the formation of In - P bonds. The main observed pathway was the formation of In - P bonds between indium and phosphorus in one precursor copy, while the carboxylate ligand of another aggregated indium precursor abstracted a ligand from the phosphorus precursor. This process produced an indium - rich cluster with structural properties similar to those of the bulk zinc - blende - type InP crystal.

In addition, these observations were confirmed by minimum - energy - path analysis, and it was determined that the In - carboxylate dissociation energy uniquely determines the potential barrier along the In - P bond - formation pathway, and is lower for the inter - recombination mechanism (13 kcal/mol) than for the intra - recombination mechanism (21 kcal/mol). The chemical properties of the phosphorus precursor control the thermodynamics of the reaction. These observations suggest that the challenges encountered so far in optimizing the synthesis process of InP QDs may be attributed to the neglect of the simultaneous adjustment strategy of the chemical properties of indium and phosphorus precursors.

In conclusion, this study reveals key details of the early - growth mechanism of InP QDs through AIMD simulations, providing a theoretical basis for improving the synthesis of InP QDs.