Thermal Localization Enhanced Terahertz Photothermoelectric Response in Quasi-One-Dimensional Material NBS3

Weidong Wu,Yingxin Wang,Yingying Niu,Ziran Zhao
DOI: https://doi.org/10.1109/icops37625.2020.9717925
2020-01-01
Abstract:Terahertz (THz) technology has shown an increasingly broad application prospects in communication, biomedicine, homeland security and material analysis, and thus it has become a hot research topic in recent years. However, due to the immature development of high-performance room temperature terahertz detectors and sources, terahertz technology is still far from full exploitation. Herein, a photothermoelectric (PTE) THz photodetector made of NbS3 is reported. The device shows a considerable performance in THz band. The photoresponsivity is as large as 1.2 VW −1 while the response time is only 7 ms, much shorter than the reported THz photodetectors of the same channel scale, such as silicon-based heterojunction 1 , millimetric scale graphene 2 and ternary chalcogenide single crystal 3 . The extraordinary performance is fully discussed and can be attributed to the thermal localization enhanced PTE effect. Due to the short thermal decay length and low thermal loss, the heat generated by the illumination is localized in only a micrometer scale along the channel and thus a strong PTE response is produced. In addition, the fabricated device also demonstrates robust flexibility and outstanding stability in air. Thanks to the quasi-one-dimensional structure, the NbS 3 crystal is easy to be scaled down for nanodevices and thus intrinsically facilitate the integration of detector. With these favorable merits, the quasi-one-dimensional NbS 3 crystal holds promising potential for high-performance, flexible and THz photodection.
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