MBE Grown InN: A Novel THz Emitter

Ricardo Ascázubi,Ingrid Wilke,Hai Lu,William J. Schaff

DOI: https://doi.org/10.1364/otst.2005.mc6

2005-01-01

Abstract:Strong optically excited terahertz emission has been observed from InN thin films. The emission mechanism has been determined to be photocarrier acceleration. This observation implies that InN has a bandgap smaller than 1.5 eV.

What problem does this paper attempt to address?

Terahertz Emission by InN

R Ascazubi,I Wilke,K Denniston,H Lu,WJ Schaff

DOI: https://doi.org/10.1063/1.1759385

IF: 4

2004-01-01

Applied Physics Letters

Abstract:We report on optically excited terahertz (THz) emission by indium nitride (InN) thin films. We have used 70 fs titanium–sapphire laser pulses with wavelengths at 800 nm to generate THz-radiation pulses. The InN thin films are deposited on sapphire substrates with GaN buffer layer by molecular-beam epitaxy. The THz-radiation emitted from the InN surface is significantly stronger than that of the GaN/InN interface. The origin of the THz emission are transient photocarrier currents. These results are in agreement with recent experimental results of InN which show that this material is a small band-gap semiconductor. The magnitude of the THz emission from the InN is strong compared to THz emission from previously investigated semiconductors.
Terahertz Emission From Silicon And Magnesium Doped Indium Nitride

ingrid wilke,ricardo ascazubi,hai lu,w j schaff

DOI: https://doi.org/10.1063/1.3043450

IF: 4

2008-01-01

Applied Physics Letters

Abstract:We report an experimental study of femtosecond optically excited emission of terahertz frequency electromagnetic radiation from as-grown n-type InN, silicon doped InN, and magnesium doped InN. We have measured the terahertz emission from these materials as function of dc Hall mobility and carrier concentrations. Terahertz emission from InN:Si and native n-type InN increases with mobility as expected for transient photocurrents as primary mechanism of terahertz emission from InN. InN:Mg exhibits enhanced terahertz emission compared to InN:Si. This is experimental evidence for Mg being electrically active as an acceptor in InN. Terahertz emission from InN:Si is less strong than terahertz emission from native n-type InN because of an increased electron concentration due to silicon being an electrically active donor in InN.
Broadband Terahertz Emission Based on the Femtosecond Laser Pulses

Guozhong Zhao,Haiyan Wang,Xinqiang Wang

DOI: https://doi.org/10.1088/1742-6596/276/1/012232

2011-01-01

Journal of Physics Conference Series

Abstract:The characteristics of terahertz (THz) radiation from the surface of InN excited by the femtosecond laser pulses are presented. The effect of intensity and central wavelength of the excited laser pulse on THz emission are studied experimentally. THz radiations from the surface emission of Mg-doped InN and InAs are compared. The results show the stronger dependence of THz radiation on the different intensity and central wavelength of the excitation pulses. THz radiation from InAs than InN has higher emission efficiency. However, the strong enhancement of THz emission is observed from InN with appropriate Mg concentrations. The mechanism of THz emission from InN is found to be the photo-Dember effect and the emission intensity is inversely proportional to the conductivity, which is beneficial to investigate THz source based on InN.
Ultrastrong Terahertz Emission from InN Nanopyramids on Single Crystal ZnO Substrates

Huiqiang Liu,Zuxin Chen,Sheng Chu,Xuechen Chen,Min Liu,Nan Peng,Guang Chu,Feng Huang,Rufang Peng

DOI: https://doi.org/10.1002/adom.201700178

IF: 9

2017-01-01

Advanced Optical Materials

Abstract:The creation of high efficiency and room temperature terahertz (THz) emitters has long been expected in both scientific and industrial communities. Despite the recent progress in THz source such as quantum cascade lasers, high efficiency THz emitters capable of operating at room temperature are still elusive. Indium nitride (InN), a narrow bandgap semiconductor, has emerged as a promising THz emitter due to its unique electronic properties. However, the efficiency of InN THz emitters reported up to now is still far from theoretically predicted because of inadequately engineered electrical conduction and radiative coupling. In this study, the authors report a novel, high performance THz emitting structure consisting of nanoengineered InN micro/nanopyramid arrays on a single crystal zinc oxide (ZnO) substrate. With improved electronic conduction from Zn diffusion induced doping and enhanced radiation coupling benefiting from uniquely structured geometry, the InN nanopyramids yielded THz emission intensity is close to an order of magnitude stronger than that of p‐type indium arsenide (InAs). These findings prove that InN is a promising THz material and of wide importance in material science, optical engineering sectors, etc.
Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Huapeng Liu,Bowen Sheng,Tao Wang,Konstantin Kudryavtsev,Artem Yablonskiy,Jiaqi Wei,Ali Imran,Zhaoying Chen,Ping Wang,Xiantong Zheng,Renchun Tao,Xuelin Yang,Fujun Xu,Weikun Ge,Bo Shen,Boris Andreev,Xinqiang Wang

DOI: https://doi.org/10.1016/j.fmre.2021.09.020

2021-01-01

Fundamental Research

Abstract:Near-infrared stimulated emission from a high-quality InN layer under optical pumping was observed with a threshold excitation power density of 0.3 and 4 kW cm−2 at T = 8 and 77 K, respectively. To achieve such a low threshold power density, vicinal GaN substrates were used to reduce the edge-component threading dislocation (ETD) density of the InN film. Cross-sectional transmission electron microscopy images reveal that the annihilation of ETDs can be divided into two steps, and the ETD density can be reduced to approximately 5 × 108 cm−2 near the surface of the 5-µm-thick film. The well-resolved phonon replica of the band-to-band emission in the photoluminescence spectra at 9 K confirm the high quality of the InN film. As a result, the feasibility of InN-based photonic structures and the underlying physics of their growth and emission properties are demonstrated.
Growth Of Inn For Heterojunction Field Effect Transistor Applications By Plasma Enhanced Mbe

w j schaff,hai lu,jeonghyun hwang,hong wu

DOI: https://doi.org/10.1109/CORNEL.2000.902542

2000-01-01

Abstract:InN is predicted to exhibit higher saturation velocity than GaN for High Electron Mobility Transistor (HFET) applications. No field effect transistors have yet been made with InN channels because, to date, InN has been only prepared with undoped electron concentrations near 1x10(20) cm(-3). In this work growth of InN by the migration enhanced epitaxy (MEE) variation of the molecular beam epitaxy (MBE) technique has been performed. Electron densities down to lower 10(18) cm(-3) have been obtained over a range of growth conditions with 300K mobilities in the range of 300-500cm(2/)Vs.
MBE Growth of Entire-Indium-composition-tunable InxGa1-xN Alloy

WANG XinQiang,WANG Ping,LIU ShiTao,ZHENG XianTong,MA DingYu,SHEN Bo

DOI: https://doi.org/10.1360/sspma2015-00114

2015-01-01

Abstract:As a direct band-gap semiconductor, ternary nitride alloy In x Ga1- x N has a tunable energy band-gap from 3.43 eV (for GaN) to 0.64 eV (for InN) with increasing In content, which covers the spectrum from 0.36 to 1.9 μm. In x Ga1- x N alloy has high electron drift velocity and absorption coefficient, which shows great potential application in devices such as full spectrum solar cells and light-emitting devices. Due to lack of proper substrate, In x Ga1- x N is usually grown on sapphire or GaN template. In this article, we review the growth and properties of InN and InGaN with tuable In composition grown on sapphire substrate and GaN/sapphire template by MBE. A boundary-temperature-controlled method is proposed, which successfully lead to a high-electron-mobility InN layers on sapphire substrate by MBE. The temperature-controlled epitaxy method used to grow In x Ga1- x N layers with tunable In composition on GaN/sapphire template.
Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

X. Q. Wang,G. Z. Zhao,Q. Zhang,Y. Ishitani,A. Yoshikawa,B. Shen

DOI: https://doi.org/10.1063/1.3303983

IF: 4

2010-01-01

Applied Physics Letters

Abstract:Effect of Mg doping on terahertz (THz) emission from InN with different lattice polarities was studied. Strong enhancement of THz emission was observed from InN with appropriate Mg-concentrations (1018 cm−3), which is independent of lattice polarity. The buried p-type layers show stronger THz emission than the n-type ones. The dominant mechanism for THz emission was found to be photo-Dember effect and the emission intensity was inversely proportional to the conductivity, which is beneficial to investigate THz emission from InN since the conductivity can be more accurately measured than the carrier concentration and mobility due to the electron accumulation on surface.
Growth-dependent Phonon Characteristics in InN Thin Films

ZG Qian,G Yu,WZ Shen,H Ogawa,QX Guo

DOI: https://doi.org/10.1016/s0921-4526(02)00569-0

2002-01-01

Abstract:We report on the infrared (IR) reflection and Raman measurements of InN thin films grown by radio frequency (RF) magnetron sputtering and microwave-excited metalorganic vapor phase epitaxy (ME-MOVPE) on GaAs (111) and sapphire (0001) substrates. X-ray diffraction measurements were employed to evaluate the quality of the InN films. By fitting the IR reflection spectra and from the Raman spectra, A1 (TO), E1 (TO), A1 (LO) and E2 (high) modes have been observed and attributed. The phonon characteristics in InN thin films as well as the film quality of InN films are found to be dependent on the growth conditions from a comparison of the results. The carrier concentration and mobility are also obtained from fitting the IR reflection spectra. The frequencies of E1 (TO) and A1 (LO) phonon modes show a manifest blueshift due to the residual compressive stress in the films.
Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Caroline E. Reilly,Cory Lund,Shuji Nakamura,Umesh K. Mishra,Steven P. DenBaars,Stacia Keller

DOI: https://doi.org/10.1063/1.5109734

IF: 4

2019-06-17

Applied Physics Letters

Abstract:N-polar InN quantum dots and thin layers grown by metal organic chemical vapor deposition were shown to exhibit tunable emission from around 1.00 μm to longer than 1.55 μm at room temperature. The emission wavelength was dependent on both the growth temperature and quantum dot size or InN layer thickness. No measurable change in InN quantum dot emission wavelength or intensity was observed after capping of the InN quantum dots with GaN, paving the way for incorporating N-polar InN quantum dots into buried regions of device structures.

physics, applied
Photoluminescence of N‐inn with Low Electron Concentrations

A Klochikhin,V Davydov,V Emtsev,A Sakharov,V Kapitonov,B Andreev,H Lu,WJ Schaff

DOI: https://doi.org/10.1002/pssa.200563512

2006-01-01

Abstract:Photoluminescence (PL) of n-InN grown by molecular beam epitaxy with Hall concentrations from 3.6 x 10(17) to 1.0 x 10(18) cm(-3) demonstrates new features as compared with that of the samples of previous generation which are characterized by a higher carrier concentration. The striking dependences of PL spectra on carrier concentration, temperature, and excitation density give evidences of a fast energy relaxation rate of photoholes and their equilibrium distribution over localized states. The well resolved structure consisting of three peaks was observed in the PL spectra of these samples in the energy interval from 0.50 to 0.67 eV at liquid helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da = 0.050-0.055 eV and the other one is attributable to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh = 0.005-0.010 eV and/or to the states of Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. Relative intensities of two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. At room temperature, the band-to-band recombination of free holes and electrons dominates in PL. Experimental results on PL and absorption are described by the model calculations under the assumptions of the band gap equal to 0.665-0.670 eV at zero temperature and zero carrier concentration and the non-parabolic conduction band with the effective mass at Gamma-point equal to 0.07 of free electron mass. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Growth of Thick InN by Molecular Beam Epitaxy

Lu Hai,Schaff William J.,Eastman Lester F.,Wu J.,Walukiewicz Wladek,Look David C.,Molnar Richard J.

DOI: https://doi.org/10.1557/proc-743-l4.10

2002-01-01

Abstract:In this study, InN films with thickness up to 7.5 micron were prepared by molecular beam epitaxy (MBE) on (0001) sapphire and quasi-bulk GaN templates. Previously it has been challenging to grow InN film much beyond 1 micron because the growing surface tended to become rough. Techniques to overcome this limit have been developed. Various buffer techniques were used and compared to optimize the epitaxial growth. It was found that with increasing film thickness, Hall mobility will monotonically increase, while carrier concentration decreases. Hall mobility beyond 2100 cm2/Vs with carrier concentration close to 3×1017 cm−3 was obtained at room temperature. Compared with the lowest carrier concentration ∼2×1018 cm−3 obtained on thin InN films grown at the same condition, the conclusion is that impurities from the growth environment are not responsible for the high background doping of InN. Instead, some structural defects or substrate/buffer impurities may be the major source of the unintentional doping, which can be reduced by growing thicker films. Some results on Mg and Be doping of InN will be reported as well. To date, all Mg and Be doping attempts have resulted in n-type material.
Molecular Beam Epitaxial (MBE) Growth and Spectroscopy of Dilute Nitride InAsN:Sb for Mid-Infrared Applications

Q. Zhuang,A. Krier

DOI: https://doi.org/10.1049/iet-opt.2009.0034

IF: 1.691

2009-01-01

IET Optoelectronics

Abstract:The molecular beam epitaxial (MBE) growth and spectroscopy of dilute nitride InAsN:Sb epilayers are presented. Nitrogen incorporation in InAsN epilayers grown by radio-frequency plasma-assisted MBE was investigated as a function of growth conditions. High-quality InAsN epilayers containing up to 2.5% nitrogen were successfully grown using optimal growth conditions. The optical properties of InAsN were studied by photoluminescence (PL). Intense PL emission at 4 K was observed with double-peak features, which were attributed to free carrier recombination and localised carrier recombination. Strong room temperature PL emission extending up to a wavelength of 4.5 mu m was obtained and a bandgap reduction of 63 meV for 1% N was deduced. The electronic properties of InAsN such as residual carrier concentration and mobility were also studied by Hall effect measurements. Further improvement of InAsN by addition of Sb during growth is also discussed. The authors observed that the introduction of Sb flux dramatically enhances nitrogen incorporation and significantly improves optical properties. In addition, Sb incorporation is enhanced with the presence of nitrogen. The authors also report the realisation of InAsN:Sb/InAs mid-infrared light emitting diodes operating at 4.0 mu m at 4 K.
20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source

SZ Wang,SF Yoon,YX Xia,SW Xie

DOI: https://doi.org/10.1063/1.1748854

IF: 2.877

2004-01-01

Journal of Applied Physics

Abstract:We report the photoluminescence (PL) properties of InN epilayers grown by solid-source molecular beam epitaxy on (0001) sapphire substrates with AlN buffer layers. The reactive nitrogen species were generated by a plasma-assisted radio frequency activated nitrogen plasma source. Hall measurements showed the electron concentration in unintentionally doped InN epilayers at room temperature to be around 5×1018 cm−3. Room temperature PL measurements revealed a strong emission peak at 0.76 eV with no signals detected within an energy range from 1.81 to 2.16 eV, suggesting a band gap of around 0.76 eV. The PL spectrum at 10 K showed a main emission peak at 0.74 eV and shoulder peak at 0.72 eV, with a 20 meV interval. Temperature-dependent PL measurements indicated a 20 meV-deep donor level in the InN epilayers.
Growth And Morphology Of 0.80 Ev Photoemitting Indium Nitride Nanowires

Mc Johnson,Cj Lee,Ed Bourret-Courchesne,Sl Konsek,S Aloni,Wq Han,A Zettl

DOI: https://doi.org/10.1063/1.1831563

IF: 4

2004-01-01

Applied Physics Letters

Abstract:InN nanowires with high efficiency photoluminescence emission at 0.80 eV are reported. InN nanowires were synthesized via a vapor solid growth mechanism from high purity indium metal and ammonia. The products consist of only hexagonal wurtzite phase InN. Scanning electron microscopy showed wires with diameters of 50-100 nm and having fairly smooth morphologies. High-resolution transmission electron microscopy revealed high quality, single crystal InN nanowires which grew in the <0001> direction. (C) 2004 American Institute of Physics.
Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

M. de la Mare,Q. Zhuang,S. Dhar,A. Krier

DOI: https://doi.org/10.1016/j.infrared.2012.06.002

IF: 2.997

2012-01-01

Infrared Physics & Technology

Abstract:Dilute nitride InAsN epitaxial layers were produced using both liquid phase and molecular beam epitaxial growth techniques. The spectral features in the photoluminescence of samples containing up to 1% N with emission energies in the mid-infrared spectral region are described and compared. The emission intensities of both LPE and MBE grown materials were found to be comparable. Increasing the N content in the InAsN alloys resulted in a significant increase in the activation energy for thermal quenching of the photoluminescence emission due to a combination of lowering of the conduction band edge and Auger de-tuning.
Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

KT Tsen,C Poweleit,DK Ferry,H Lu,WJ Schaff

DOI: https://doi.org/10.1016/j.jcrysgro.2005.12.009

IF: 1.8

2006-01-01

Journal of Crystal Growth

Abstract:Transient Raman spectroscopy has been used to study electron transport in an InN film grown on GaN at T=300K. Our experimental results demonstrate that under the subpicosecond laser excitation and probing, electron drift velocity of carriers in the Γ valley can exceed its steady-state value by as much as 40%. Electron velocities have been found to cut off at around 2×108cm/s, significantly larger than those observed for other III–V semiconductors such as GaAs and InP. These experimental results suggest that InN is potentially an excellent material for ultrafast electronic devices.
InAs-based Dilute Nitride Materials and Devices for the Mid-Infrared Spectral Range

A. Krier,M. de la Mare,Q. Zhuang,P. J. Carrington,A. Patane

DOI: https://doi.org/10.1117/12.2008800

2013-01-01

Abstract:In this work we report on the characterization of InAsNSb dilute nitride alloys and mutli-quantum well structures. InAsN epilayers with room-temperature photoluminescence emission have been successfully grown by MBE on InAs and GaAs substrates. By careful attention to growth conditions, device quality material can be obtained for N contents up to similar to 3% with band gap reduction which follows the band anti-crossing model. Mid-infrared light-emitting diodes containing ten-period InAsNSb/InAs multi-quantum wells within the active region were fabricated. These devices exhibited electroluminescence up to room temperature consistent with e-hh(1) and e-lh(1) transitions within type I quantum wells in good agreement with calculations. Comparison of the temperature dependence of the EL with that of type II InAsSb/InAs reveals more intense emission at low temperature and an improved temperature quenching up to T similar to 200 K where thermally activated carrier leakage becomes important and further increase in the QW band offsets is needed. This material system shows promise for use in mid-infrared diode lasers and other optoelectronic devices.
Acceptor States in the Photoluminescence Spectra of N-Inn

AA Klochikhin,VY Davydov,VV Emtsev,AV Sakharov,VA Kapitonov,BA Andreev,H Lu,WJ Schaff

DOI: https://doi.org/10.1103/physrevb.71.195207

2005-01-01

Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.
In(AsN) Mid-Infrared Emission Enhanced by Rapid Thermal Annealing

M. Kesaria,S. Birindelli,A. V. Velichko,Q. D. Zhuang,A. Patane,M. Capizzi,A. Krier

DOI: https://doi.org/10.1016/j.infrared.2014.11.016

IF: 2.997

2014-01-01

Infrared Physics & Technology

Abstract:We report a substantial increase in the quality and photoluminescence (PL) emission efficiency of In(AsN) dilute nitride alloys grown on both p-type InAs and semi-insulting GaAs substrates, in response to rapid thermal annealing. At 4 K the PL emission efficiency increases by 25 times due to a reduction in non-radiative Shockley-Read-Hall recombination originating from elimination of point defects. For annealing temperatures up to 500 degrees C the activation energy for thermal quenching increases by a factor of three, with no change in the residual electron concentration and mobility. Temperature dependent PL, together with X-ray diffraction measurements, reveals an improvement in compositional uniformity. Our results are significant for photonic device applications and particularly for the development of cryogenic mid-infrared photodiodes, monolithic detectors and focal plane arrays. (C) 2014 Elsevier B.V. All rights reserved.

MBE Grown InN: A Novel THz Emitter

Terahertz Emission by InN

Terahertz Emission From Silicon And Magnesium Doped Indium Nitride

Broadband Terahertz Emission Based on the Femtosecond Laser Pulses

Ultrastrong Terahertz Emission from InN Nanopyramids on Single Crystal ZnO Substrates

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Growth Of Inn For Heterojunction Field Effect Transistor Applications By Plasma Enhanced Mbe

MBE Growth of Entire-Indium-composition-tunable InxGa1-xN Alloy

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Growth-dependent Phonon Characteristics in InN Thin Films

Infrared luminescence from N-polar InN quantum dots and thin films grown by metal organic chemical vapor deposition

Photoluminescence of N‐inn with Low Electron Concentrations

Growth of Thick InN by Molecular Beam Epitaxy

Molecular Beam Epitaxial (MBE) Growth and Spectroscopy of Dilute Nitride InAsN:Sb for Mid-Infrared Applications

20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source

Growth And Morphology Of 0.80 Ev Photoemitting Indium Nitride Nanowires

Mid-infrared photoluminescence of InAsN dilute nitride alloys grown by LPE and MBE

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

InAs-based Dilute Nitride Materials and Devices for the Mid-Infrared Spectral Range

Acceptor States in the Photoluminescence Spectra of N-Inn

In(AsN) Mid-Infrared Emission Enhanced by Rapid Thermal Annealing