Abstract:In this paper, we present an effective synthetic protocol to produce high quality InN nanocrystals using indium iodide (InI3), one member of the family of indium halides, as the indium source at a low temperature of <250 degrees C (far below the decomposition temperature of InN). Notably, reports on InN synthesized from indium halides are rare due to the lack of well-defined synthetic protocols. Here, indium iodide (InI3), with a stronger covalent ability, can also prevent the In3+ from being reduced to elemental indium, and then InN is formed. This synthetic protocol not only provides an alternative method to successfully synthesize high-quality InN, but is also useful to fabricate other functional materials by using stronger covalent reactants to prevent reduction/oxidation in the oxidation/reduction reaction process, respectively. Furthermore, we also report the first example of an orientation-attachment process occurring between the metal nitride particles. The high purity of the InN nanoparticles can be seen from the XPS and HRTEM results, showing the as-obtained products possess no obvious iodine or amorphous layers on the surface of particles, respectively. By controlling the parameters of reaction temperature and time, nanoparticles with different sizes were obtained as the final products. Raman and IR results indicate that our experimental data were consistent with the theoretical prediction and this gives further evidence that high quality InN nanocrystals were obtained. Moreover, it has been shown that the near-infrared band around 0.7 eV is characteristic of these samples and there were no obvious peaks around 1.9 eV, indicating that these InN nanocrystals exhibit a band gap of 0.7 eV, rather than the previously accepted 1.9 eV.

Growth And Morphology Of 0.80 Ev Photoemitting Indium Nitride Nanowires

Growth, Crystal Structure, and Photoluminescent Properties of Dilute Nitride InAsN Nanowires on Silicon for Infrared Optoelectronics

Correlation of Morphology Evolution with Carrier Dynamics in InN Films Heteroepitaxially Grown by MOMBE

Study of surface morphology control and investigation of hexagonal indium nitride nanorods grown on GaN/sapphire substrate

Large-scale growth of In<sub>2</sub>O<sub>3</sub> nanowires and their optical properties

Synthesis Of Long Indium Nitride Nanowires With Uniform Diameters In Large Quantities

Self-Seeded MOCVD Growth and Dramatically Enhanced Photoluminescence of InGaAs/InP Core–Shell Nanowires

Axial Growth Characteristics of Optically Active InGaAs Nanowire Heterostructures for Integrated Nanophotonic Devices

Photoluminescence Spectroscopy Of Nearly Defect-Free Inn Microcrystals Exhibiting Nondegenerate Semiconductor Behaviors

In situ spectroscopic ellipsometry and RHEED monitored growth of InN nanocolumns by molecular beam epitaxy

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Light Emission Induced by the Indium Distribution in InGaN Nanowires

Long indium-rich InGaAs nanowires by SAG-HVPE

Large-scale cubic InN nanocrystals by a combined solution- and vapor-phase method under silica confinement

Synthesis of [100] Wurtzite InN Nanowires and [011] Zinc-Blende InN Nanorods

Characteristics and Fabrications of InN Nanowire Material

Chemical Vapor Deposition Growth of Inn Nanostructures: Morphology Regulation and Field Emission Properties

Growth of InN quantum dots to nanorods: A competition between nucleation and growth rates

Indium nitride from indium iodide at low temperatures: synthesis and their optical properties

Growth and Optical Properties of Highly Uniform and Periodic InGaN Nanostructures

Observation of Phonon Sideband Emission in Intrinsic InN Nanowires: a Photoluminescence and Micro-Raman Scattering Study.