Abstract:Photoluminescence (PL) of n-InN grown by molecular beam epitaxy with Hall concentrations from 3.6 x 10(17) to 1.0 x 10(18) cm(-3) demonstrates new features as compared with that of the samples of previous generation which are characterized by a higher carrier concentration. The striking dependences of PL spectra on carrier concentration, temperature, and excitation density give evidences of a fast energy relaxation rate of photoholes and their equilibrium distribution over localized states. The well resolved structure consisting of three peaks was observed in the PL spectra of these samples in the energy interval from 0.50 to 0.67 eV at liquid helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da = 0.050-0.055 eV and the other one is attributable to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh = 0.005-0.010 eV and/or to the states of Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. Relative intensities of two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. At room temperature, the band-to-band recombination of free holes and electrons dominates in PL. Experimental results on PL and absorption are described by the model calculations under the assumptions of the band gap equal to 0.665-0.670 eV at zero temperature and zero carrier concentration and the non-parabolic conduction band with the effective mass at Gamma-point equal to 0.07 of free electron mass. (c) 2006 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultrafast carrier dynamics in InN epilayers

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Time-resolved Spectroscopy of Recombination and Relaxation Dynamics in InN

Hole Transport and Carrier Lifetime in InN Epilayers

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Temperature-Dependent Optical Properties of Wurtzite Inn

Ultrafast dynamics of electronic structure in InN thin film

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Non-Equilibrium Carrier Transport in A High-Quality Inn Film Grown on Gan

Ultrafast Recombination in Si-doped InN

Observation of Large Electron Drift Velocities in Inn by Ultrafast Raman Spectroscopy

Optical Bleaching Effect in Inn Epitaxial Layers

Ultrafast Raman Scattering Studies of Electron Transport in A Thick Inn Film Grown on Gan

Photoluminescence of N‐inn with Low Electron Concentrations

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

20 Mev-Deep Donor Level in Inn Film of 0.76 Ev Band Gap Grown by Plasma-Assisted Nitrogen Source