Abstract:Knowledge of the carrier recombination, relaxation, and transport processes in InN materials is essential for determining the applicability of this material system in photonic and electronic applications. In this article, we provide a review of time-resolved spectroscopy experimental techniques and our recent results using these techniques to measure transient processes in InN. Specifically, subpicosecond differential transmission experiments were used to determine the carrier recombination lifetime and the carrier thermalization time of InN. In those experiments, we observed a fast initial hot carrier cooling followed by a slower recombination process. At short times after pulsed excitation, modeling of the observed relaxation suggests that the dominant energy relaxation process is longitudinal optical phonon scattering modified by a strong hot phonon effect at room temperature. An inverse proportionality between the carrier lifetime and the free electron concentration was found. This suggests that donor-like defects or impurities may stimulate the formation of non-radiative recombination centers. Furthermore, we report the measurements of in-plane carrier transport and hole mobility of an InN epilayer by time-resolved transient grating spectroscopy using subpicosecond pulses at 800 nm and ~1900 nm for grating writing and probing, respectively. The ambipolar diffusion coefficient Da = 2.0 cm2/s and hole mobility µh = 39 cm2/Vs at 300 K near the InN surface were determined by monitoring the transient grating kinetics at various grating periods.

Non-Equilibrium Carrier Transport in A High-Quality Inn Film Grown on Gan

Field-Induced Nonequilibrium Electron Distribution And Electron Transport In A High-Quality Inn Thin Film Grown On Gan

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Ultrafast Raman Scattering Studies of Electron Transport in A Thick Inn Film Grown on Gan

Observation of Large Electron Drift Velocities in Inn by Ultrafast Raman Spectroscopy

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Transport and mobility properties of wurtzite InN and GaN

High Electron Mobility in Nearly-Dislocation-free Hexagonal InN

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy

Observation Of Nonequilibrium Longitudinal Optical Phonons In Inn And Its Implications

On the Crystalline Structure, Stoichiometry and Band Gap of Inn Thin Films

Ultrafast carrier dynamics in InN epilayers

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Infrared Stimulated Emission with an Ultralow Threshold from Low-Dislocation-density InN Films Grown on a Vicinal GaN Substrate

Electron Behavior and Impurity Properties As Functions of Growth Temperature for Inn Grown by Using Plasma-Assisted Molecular Beam Epitaxy

Effects of Dislocations on Electron Transport in Wurtzite InN

Growth of High Mobility InN Film on Ga‐Polar GaN Substrate by Molecular Beam Epitaxy for Optoelectronic Device Applications

Temperature-Dependent Optical Properties of Wurtzite Inn

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy