Abstract:Knowledge of the carrier recombination, relaxation, and transport processes in InN materials is essential for determining the applicability of this material system in photonic and electronic applications. In this article, we provide a review of time-resolved spectroscopy experimental techniques and our recent results using these techniques to measure transient processes in InN. Specifically, subpicosecond differential transmission experiments were used to determine the carrier recombination lifetime and the carrier thermalization time of InN. In those experiments, we observed a fast initial hot carrier cooling followed by a slower recombination process. At short times after pulsed excitation, modeling of the observed relaxation suggests that the dominant energy relaxation process is longitudinal optical phonon scattering modified by a strong hot phonon effect at room temperature. An inverse proportionality between the carrier lifetime and the free electron concentration was found. This suggests that donor-like defects or impurities may stimulate the formation of non-radiative recombination centers. Furthermore, we report the measurements of in-plane carrier transport and hole mobility of an InN epilayer by time-resolved transient grating spectroscopy using subpicosecond pulses at 800 nm and ~1900 nm for grating writing and probing, respectively. The ambipolar diffusion coefficient Da = 2.0 cm2/s and hole mobility µh = 39 cm2/Vs at 300 K near the InN surface were determined by monitoring the transient grating kinetics at various grating periods.

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy

Puzzle Of Non-Surface Related 2d Electron Gas In N-Inn Epitaxial Samples

Ultrafast carrier dynamics in InN epilayers

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Hole Transport and Carrier Lifetime in InN Epilayers

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Identification of the Main Contributions to the Conductivity of Epitaxial InN

Abnormal Magnetic-Field Dependence of Hall Coefficient in Inn Epilayers

Studies of High Field Transport in a High-Quality InN Film by Ultrafast Raman Spectroscopy

Improvement on Epitaxial Grown of InN by Migration Enhanced Epitaxy

Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

Growth of Thick InN by Molecular Beam Epitaxy

Large Magnetoresistance Effect in Inn Epilayers

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

Electrical Properties of Surface and Interface Layers of the N- and In-polar Undoped and Mg-doped InN Layers Grown by PA MBE

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities

Electron Transport in Inn Layers Grown by Plasma-Assisted Molecular Beam Epitaxy

Optical Studies of Carrier Dynamics and Non-Equilibrium Optical Phonons in Nitride-Based Semiconductors