Abstract:We report the epitaxial growth of the $\mathrm{Cr}$-doped ${\mathrm{In}}_{2\ensuremath{-}x}{\mathrm{Cr}}_{x}{\mathrm{O}}_{3}$ (x = 0.05) ($\mathrm{Cr}$:${\mathrm{In}}_{2}{\mathrm{O}}_{3}$) semiconducting thin films on perovskite-type (111)-oriented $0.7\mathrm{Pb}({\mathrm{Mg}}_{1/3}{\mathrm{Nb}}_{2/3}){\mathrm{O}}_{3}$\ensuremath{-}$0.3{\mathrm{Pb}\mathrm{Ti}\mathrm{O}}_{3}$ (PMN-PT) ferroelectric single-crystal substrates in the form of ferroelectric field-effect devices that allow us to obtain an in situ tuning of the electron carrier density and magnetoresistance (MR) as well as the resistance in a reversible and nonvolatile manner, thereby stringently disclosing the relationship between the MR and the electron carrier density. Specifically, for the thinnest 25-nm $\mathrm{Cr}$:${\mathrm{In}}_{2}{\mathrm{O}}_{3}$ film the polarization switching of the PMN-PT from the positively polarized ${P}_{r}^{+}$ state to the negatively polarized ${P}_{r}^{\ensuremath{-}}$ state results in a large increase in the resistance and MR. Particularly, at T = 10 K, the polarization switching induces reversible and nonvolatile changes in the magnitude and sign of MR, demonstrating strong coupling between the MR and the electron carrier density. Moreover, regardless of the polarization states of PMN-PT, MR for films with different thicknesses can be quite well described by a combination of the two-band model and the semiempirical model proposed by Khosla and Fischer based on which the positive MR (PMR) and negative MR (NMR) could be disentangled into positive component [MR(+)] and negative component [MR(\ensuremath{-})], respectively. We find that the polarization-switching-induced large decrease in the PMR and the change in the sign of MR from positive to negative is mainly due to the rapid decrease in the MR(+), demonstrating that the coupling between MR(+) and electron carrier density plays a dominant role in controlling the magnitude and sign of MR.

Large Magnetoresistance Effect in Inn Epilayers

Identification of the Main Contributions to the Conductivity of Epitaxial InN

Abnormal Magnetic-Field Dependence of Hall Coefficient in Inn Epilayers

Negative Giant Longitudinal Magnetoresistance in NiMnSb/InSb: An interface effect

Influence of MBE Growth Modes and Conditions on Spontaneous Formation of Metallic in Nanoparticles and Electrical Properties of InN Matrix

Giant Magnetoresistance in Fe/In Multilayers and Its Anomalous Temperature Dependence

Effect of Mg Doping on Enhancement of Terahertz Emission from Inn with Different Lattice Polarities

Large, Tunable Magnetoresistance in Nonmagnetic III-V Nanowires.

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Electrical Properties of Surface and Interface Layers of the N- and In-polar Undoped and Mg-doped InN Layers Grown by PA MBE

A comprehensive study of the magnetic, structural and transport properties of the III-V ferromagnetic semiconductor InMnP

Extraordinary Tunneling Magnetoresistance in Antiferromagnetic Tunnel Junctions with Antiperovskite Electrodes

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Giant oscillatory tunnel magnetoresistance in CoFe/MgO/CoFe(001) junctions

Tunnel magnetoresistance in magnetic tunnel junctions with embedded nanoparticles

Negative thermal expansion and magnetocaloric effect in Mn-Co-Ge-In thin films

Tunable Magnetoresistance and Charge Carrier Density in Cr:In2O3/PbMg1/3

Giant Intrinsic Tunnel Magnetoresistance In Manganite Thin Films Etched With Antidot Arrays

Microstructure and Dislocation of Epitaxial Inn Films Revealed by High Resolution X-Ray Diffraction

Tunneling magnetoresistance effect with controlled spin polarization based on Mn 3 ZnN

Puzzle Of Non-Surface Related 2d Electron Gas In N-Inn Epitaxial Samples