Abstract:Infrared spectroscopic ellipsometry is applied to investigate the free-charge carrier properties of Mg-doped InN films. Two representative sets of In-polar InN grown by molecular beam epitaxy with Mg concentrations ranging from 1.2 x 10(17) cm(-3) to 8 x 10(20) cm(-3) are compared. P-type conductivity is indicated for the Mg concentration range of 1 x 10(18) cm(-3) to 9 x 10(19) cm(-3) from a systematic investigation of the longitudinal optical phonon plasmon broadening and the mobility parameter in dependence of the Mg concentration. A parameterized model that accounts for the phonon-plasmon coupling is applied to determine the free-charge carrier concentration and mobility parameters in the doped bulk InN layer as well as the GaN template and undoped InN buffer layer for each sample. The free-charge carrier properties in the second sample set are consistent with the results determined in a comprehensive analysis of the first sample set reported earlier [Schoche et al., J. Appl. Phys. 113, 013502 (2013)]. In the second set, two samples with Mg concentration of 2.3 x 10(20) cm(-3) are identified as compensated n-type InN with very low electron concentrations which are suitable for further investigation of intrinsic material properties that are typically governed by high electron concentrations even in undoped InN. The compensated n-type InN samples can be clearly distinguished from the p-type conductive material of similar plasma frequencies by strongly reduced phonon plasmon broadening. (C) 2014 Elsevier B.V. All rights reserved.

Identification of the Main Contributions to the Conductivity of Epitaxial InN

Electrical Properties of Surface and Interface Layers of the N- and In-polar Undoped and Mg-doped InN Layers Grown by PA MBE

Large Magnetoresistance Effect in Inn Epilayers

Puzzle Of Non-Surface Related 2d Electron Gas In N-Inn Epitaxial Samples

Abnormal Magnetic-Field Dependence of Hall Coefficient in Inn Epilayers

Demonstration of Nearly Non-Degenerate Electron Conduction in Inn Grown by Molecular Beam Epitaxy

Influence of MBE Growth Modes and Conditions on Spontaneous Formation of Metallic in Nanoparticles and Electrical Properties of InN Matrix

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

The Influence of Indium Surfactant on the Electrical Properties of GaN Epilayers Grown by Metal-Organic Chemical Vapour Deposition

Free-charge Carrier Parameters of N-Type, P-Type and Compensated InN:Mg Determined by Infrared Spectroscopic Ellipsometry

Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

Investigation on the Structural Origin of N-Type Conductivity in Inn Films

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities

Correlation Between Switching to N-Type Conductivity and Structural Defects in Highly Mg-doped InN

Tuning of the Intrinsic Magnetic Damping Parameter in Epitaxial CoNi(001) Films : Role of the Band-Filling Effect

Study of Interface Properties of InN and InN-Based Heterostructures by Molecular Beam Epitaxy

Structural Investigations of Epitaxial Inn by X-Ray Photoelectron Diffraction and X-Ray Diffraction

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

High-Electron-Mobility InN Layers Grown by Boundary-Temperature-Controlled Epitaxy

Electronic band structures and transport properties of wurtzite indium nitride grown by metalorganic vapor phase epitaxy

Anomalous Surface Potential Behavior Observed In Inn By Photo-Assisted Kelvin Probe Force Microscopy