Abstract:Interband photoluminescence (PL) and absorption spectra of n-InN samples with Hall concentrations from 3.6 X 10(17) to 6 X 10(18) cm(-3) were studied. Sample thicknesses were in the range from 12 to 0.47 mu m. A set of lasers for the PL excitation in the energy range from 2.41 down to 0.81 eV was used. The well-resolved structure consisting of three peaks was observed in the PL spectra of the high-quality samples in the energy interval from 0.50 to 0.67 eV at liquid-helium and nitrogen temperatures. We attributed one of two low-energy features of the spectra to the recombination of degenerate electrons with the holes trapped by deep acceptors with a binding energy of E-da=0.050-0.055 eV, and the other one was attributed to the LO-phonon replica of this band. The higher-energy PL peak is considered as a complex band formed by two mechanisms. The first one is related to the transitions of electrons to the states of shallow acceptors with a binding energy of E-sh=0.005-0.010 eV and/or to the states of the Urbach tail populated by photoholes. The second mechanism contributing to this band is the band-to-band recombination of free holes and electrons. The relative intensities of the two higher-energy PL peaks were found to be strongly dependent on temperature and excitation power. A model approach taking into account the Urbach tails of conduction and valence bands and the acceptor states was developed. The calculations of PL and the absorption spectra have shown that the band gap of InN in the limit of zero temperature and zero electron concentration is close to 0.665-0.670 eV. The model calculations allowed us to explain the structures of all the spectra observed, their dependence on the excitation power, and the temperature variations of PL and the absorption spectra. The effective masses of electrons at the Gamma point equal to 0,042 and 0.07 of free-electron mass were tested in calculations. The conductivity band was assumed to be nonparabolic.

Infrared ellipsometry and near-infrared-to-vacuum-ultraviolet ellipsometry study of free-charge carrier properties in In-polar p-type InN

Free-charge Carrier Parameters of N-Type, P-Type and Compensated InN:Mg Determined by Infrared Spectroscopic Ellipsometry

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films

Coexistence of Free Holes and Electrons in InN:Mg with In- and N-growth Polarities

Hole Density And Anisotropic Mobility Of Mg-Doped Inn From The Analysis Of Lo Phonon-Hole Plasmon Properties

Systematic Study on P-Type Doping Control of Inn with Different Mg Concentrations in Both in and N Polarities

Search for Free Holes in Inn:Mg-Interplay Between Surface Layer and Mg-Acceptor Doped Interior

Hole Mobility in Mg-Doped P-Type Inn Films

Growth and Properties of Mg-doped In-polar InN Films

Electrical Properties of Surface and Interface Layers of the N- and In-polar Undoped and Mg-doped InN Layers Grown by PA MBE

Optical Studies of High-Field Carrier Transport of InN Thick Film Grown on GaN

Polarity Inversion in High Mg-Doped In-Polar Inn Epitaxial Layers

SIMS and Raman Studies of Mg‐doped InN

Carrier Recombination, Relaxation, and Transport Dynamics in InN

Analysis of Nonradiative Carrier Recombination Processes in InN Films by Mid-infrared Spectroscopy

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Transition of Dominant Lattice Sites of Mg in InN:Mg Revealed by Raman Scattering

Identification of the Main Contributions to the Conductivity of Epitaxial InN

Investigation of multiple carrier effects in InN epilayers using variable magnetic field Hall measurements

Acceptor States in the Photoluminescence Spectra of N-Inn

Effect of Electron Distribution in InN Films on Infrared Reflectance Spectrum of Longitudinal Optical Phonon-Plasmon Interaction Region