Anomalous Hall Mobility Kink Observed in Mg-doped InN: Demonstration of P-Type Conduction

N. Ma,X. Q. Wang,F. J. Xu,N. Tang,B. Shen,Y. Ishitani,A. Yoshikawa
DOI: https://doi.org/10.1063/1.3522892
IF: 4
2010-01-01
Applied Physics Letters
Abstract:The p-type conduction in Mg-doped InN film is identified by an anomalous Hall mobility kink observed at ∼600 K in temperature-dependent Hall-effect measurements. The good agreement between experimental results and ensemble Monte Carlo simulation confirms the p-type bulk conduction under the surface electron accumulation layer. Furthermore, it is found that there is an exponential relationship between the hole concentration in the p-type bulk layer and the reciprocal kink temperature, which provides an effective way to evaluate the hole concentration in Mg-doped InN bulk layer through Hall-effect measurements.
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