Advantage of In- over N-polarity for Disclosure of P-Type Conduction in InN:Mg

L. H. Dmowski,M. Baj,X. Q. Wang,X. T. Zheng,D. Y. Ma,L. Konczewicz,T. Suski
DOI: https://doi.org/10.1063/1.4875482
IF: 2.877
2014-01-01
Journal of Applied Physics
Abstract:We have measured thermoelectric power in two series of polar InN:Mg samples with wide range of Mg content having In- as well as N-growth polarities. We have observed essential differences between both polarities: In the “p-type window” centered at about 1 × 1019 cm−3 of [Mg], reported recently, the thermoelectric power changed its sign from n to p-type, only for In-growth polarity samples. These results have been confirmed by the so-called mobility spectrum analysis. It strongly supports the suggestion that In-growth polarity is more propitious to p-type conduction in InN:Mg than the N one.
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