Abstract:Semiconductors with wide band gap (3.0 eV), high dielectric constant (> 10), good thermal dissipation, and capable of $n$- and $p$-type doping are highly desirable for high-energy power electronic devices. Recent studies indicate that $\rm ZnGa_2O_4$ may be suitable for these applications, standing out as an alternative to $\rm Ga_2O_3$. The simple face centered cubic spinel structure of $\rm ZnGa_2O_4$ results in isotropic electronic and optical properties, in contrast to the large anisotropic properties of the $\beta$-monoclinic $\rm Ga_2O_3$. In addition, $\rm ZnGa_2O_4$ has shown, on average, better thermal dissipation and potential for $n$- and $p$-type conductivity. Here we use density functional theory and hybrid functional calculations to investigate the electronic, optical, and point defect properties of $\rm ZnGa_2O_4$, focusing on the possibility for $n$- and p-type conductivity. We find that the cation antisite $\rm Ga_{Zn}$ is the lowest energy donor defect that can lead to unintentional $n$-type conductivity. The stability of self-trapped holes (small hole polarons) and the high formation energy of acceptor defects make it difficult to achieve $p$-type conductivity. However, with excess of Zn, forming $\rm Zn_{(1+2x)}Ga_{2(1-x)}O_4$ alloys display an intermediate valence band, facilitating $p$-type conductivity. Due to the localized nature of this intermediate valence band, $p$-type conductivity by polaron hopping is expected, explaining the low mobility and low hole density observed in recent experiments.

P-Type Conduction in Zn-Ion Implanted Inn Films

Hole conductivity through a defect band in $\rm ZnGa_2O_4$

Detecting P-Type Conduction in Ba-Doped Inn

P-Type Behavior in In–N Codoped ZnO Thin Films

Investigation on the Structural Origin of N-Type Conductivity in Inn Films

Preparation Of P-Type Zno :(Al, N) By A Combination Of Sol-Gel And Ion-Implantation Techniques

P-Type Conversion of Zno Thin Films by Plasma Immersion Ion Implantation

Non-axial NO-VZn shallow acceptor complexes in nitrogen implanted p-type ZnO thin films

Control and Improvement of P-Type Conductivity in Indium and Nitrogen Codoped Zno Thin Films

P-Type Behavior of Nitrogen Doped, Lithium Doped, and Nitrogen-Lithium Codoped Zn0.11mg0.89o Thin Films

P-type Single-Crystalline ZnO Films Obtained by (li, N) Dual Implantation Through Dynamic Annealing Process

Infrared Analysis of Hole Properties of Mg-doped P-Type InN Films

Revealing of the transition from n- to p-type conduction of InN:Mg by photoconductivity effect measurement

Complex diffusion mechanism of Zn in InP

Origin of the N-Type Conductivity of InN: the Role of Positively Charged Dislocations

Electrical Properties of Insbn Alloys Fabricated by Two-Step Ion Implantation

P-Type Behavior in Na-doped ZnO Films and ZnO Homojunction Light-Emitting Diodes

p-Type conduction in Al–N co-doped ZnO films

P-Type Behavior in Li-doped Zn0.9Mg0.1O Thin Films

Anisotropy of Zero-Resistance States in InN Films under an In-Plane Magnetic Filed

InN doped with Zn: Bulk and surface investigation from first principles