Abstract:Quintuple heterotypic homojunction GaAs film for PEC is constructed, in which the homojunction with gradient energy band enables essential improvement in electrical properties of GaAs for carrier transport through the constructed high‐speed carrier transport channel. These characteristics further guide and optimize the homojunction interfaces with carrier driving fields for enhanced PEC photodetector performance. The energy band structure and surface/interface properties are prerequisite for not only preserving the intrinsic material quality but also manipulating carrier transport behavior for photoelectrochemical (PEC) photodetection. How to precisely design/regulate the band structure and surface/interface properties of semiconductor materials is the key to improving the performance of PEC photodetection. Herein, the quintuple heterotypic homojunction (QH) GaAs film is fabricated with a gradient energy band via plasma‐assisted molecular beam epitaxy for constructing a high‐speed carrier transport channel in PEC photodetection, which can efficiently drive the separation and transport of photogenerated electron‐hole pairs. The designed QH‐GaAs‐based PEC photodetector exhibits excellent performances, compared with bare i‐GaAs, delivering an ultrashort rise/decay times of only 1.1/1.1 ms and a high responsivity of 20.4 mA W−1 at 0 V under 850 nm illumination. Strikingly, an ultrahigh detectivity with 1.46 × 1012 Jones is achieved. More importantly, the QH‐GaAs device can stably operate underwater seawater environment. This study provides a novel strategy for designing and fabricating multiple heterotypic homojunction with gradient energy band to boost charge transport dynamics for PEC fields.

Effect of Substrate Photoexcitation on Channel Conduction in A Modulation-Doped Alxga1-Xas/Gaas Heterostructure

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Direct Observation of Above-Quantum-step Quasibound States Ingaas/alx

Study On The Subband Properties Of Alxga1-X/Gan Modulation-Doped Heterostructures

Influence of the illumination on the subband structure and occupation in Al<sub><i>x</i></sub>Ga<sub>1−<i>x</i></sub>N/GaN heterostructures

Different Temperature Dependence of Carrier Transport Properties Between Alxga1-Xn/Inyga1-Yn/Gan and Alxga1-Xn/Gan Heterostructures

Influence of the illumination on the subband structure and occupation in Al x Ga 1− x N/GaN heterostructures

Acceptor-Related Radiative Recombination of Quasi-Two-Dimensional Electrons in Modulation-Doped Gaas/Alxga1-Xas Heterojunctions

Probing Semiconductor Band Structures and Heterojunction Interface Properties with Ballistic Carrier Emission: Gaas/Alxga1-Xas As A Model System

Effect of Carrier Confinement on Photoluminescence from Modulation-Doped AlxGa1−xN/GaN Heterostructures

Effect of the Inter-Subband Scattering in Modulation-Doped AlxGa1-xN/GaN Heterostructures

Subband Electron Properties Of Modulation-Doped Alxga1-Xn/Gan Heterostructures With Different Barrier Thicknesses

Enhancing Magnetic Damping under GaAs Band-Edge Photoexcitation in a Co2FeAl/ n-GaAs Heterojunction

Behavior of exciton in direct−indirect band gap Al x Ga 1−x As crystal lattice quantum wells

Enhancement of the photoluminescence intensity in short-period GaAs/AlAs superlattices with different well and barrier thickness

Effects of buffer doping on the strain relaxation of metamorphic InGaAs photodetector structures

Subband Characteristics of Si Δ-Doped Pseudomorphic In0.2Ga0.8As/GaAs Heterostructures

Effect of Valence-Band Hybridization on the Exciton Spectra in Gaas-Ga1-Xalxas Quantum-Wells

Study on the Subband Properties of Alx Ga1-x N/GaN Modulation-Doped Heterostructures

Donor binding energy and thermally activated persistent photoconductivity in high mobility (001) AlAs quantum wells

The Construction and Mechanism Study of High‐Speed Carrier Transport Channel in Gallium Arsenide Homojunction Toward High‐Performance Photoelectrochemical Photodetector