Abstract:The effects of inversion asymmetry on the anisotropic optical transition in the presence of electric field (Pockels effect) in GaAs/${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathit{x}}$${\mathrm{Al}}_{\mathit{x}}$As quantum wells and superlattices are investigated theoretically. Within an 8\ifmmode\times\else\texttimes\fi{}8 k\ensuremath{\cdot}p effective mass Hamiltonian formalism, in which the linear k, ${\mathit{k}}^{3}$, \ensuremath{\epsilon} (strain due to the piezoelectric effect), \ensuremath{\epsilon}k, and Rashba terms are taken into account, we have derived the renormalized effective Hamiltonian for the electron and hole, respectively. The effects of the inversion asymmetry and the hole mixing on the spin-split subband structures and the dependence of optical transition matrix elements on the polarization of incident light are fully presented. The microscopic model clearly shows that the inversion asymmetry is responsible for the Pockels effect. The roles played by the hole mixing in the enhanced quantum well Pockels effect mediated by the electron-hole pairs are shown by our calculations. Thus, we develop a theory with exciton states with eight spin components (due to the broken twofold degeneracy of the electrons) in the quantum well and calculate the excitonic spectra. The symmetry analysis and numerical results indicate that the excitonic anisotropic behavior results from the interference between different spin components of holes, which, owing to the heavy- and light-hole mixing, is enhanced significantly compared with the bulk material, especially for those exciton states whose dominant component does not coincide with its optically active component. Comparison between theory and experiment is discussed.

Effect of Valence-Band Hybridization on the Exciton Spectra in Gaas-Ga1-Xalxas Quantum-Wells

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Exciton Spectra In Gaas/Ga1-Xalxas Quantum Wells In An Externally Applied Electric-Field

Band Hybridization Effect in InAs/GaSb Based Quantum Wells

SUBBANDS AND EXCITONS IN A GaAs/Ga1-xAlxAs QUANTUM WELL IN AN ELECTRIC FIELD

Hot electron effect in GaAs/ AlGaAs multiple quantum wells

Properties of Electrons and Excitons in Graded Quantum Wells of Ga1-xAlxAs in an Electric Field

Valence Band Structures of Gaas/Alas Lateral Superlattices

Zeeman Splitting of Excitons in GaAs/AlGaAs Quantum Wells in the Faraday Geometry

Band Hybridization and Spin-Splitting in Inas/Alsb/Gasb Type Ii and Broken-Gap Quantum Wells

Intersubband Transitions In Asymmetric Alxga1-Xn/Gan Double Quantum Wells

Behavior of exciton in direct−indirect band gap Al x Ga 1−x As crystal lattice quantum wells

Inversion Asymmetry, Hole Mixing, and Enhanced Pockels Effect in Quantum Wells and Superlattices.

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells

Effect of Conduction Band Non-Parabolicity on the Nonlinear Optical Properties in GaAs/Ga1−xAlxAs Double Semi-V-shaped Quantum Wells

Efficient band-structure calculations of strained quantum wells

Effects of strain and hydrostatic pressure on exciton properties in asymmetric zinc-blende (In,Ga)N/GaN coupled double quantum wells

Exchange-Induced Band Hybridization in Inas/Gasb Based Type Ii and Broken-Gap Quantum Well Systems

Excitons in the wurtzite AlGaN/GaN quantum-well heterostructures

Study Of Optical Properties In Gaas1-Xsbx/Gaas Single Quantum Wells

Optical Transitions In Ganas/Gaas Single Quantum Well