Abstract:We have made a comprehensive photoluminescence (PL) study of the low lying conduction band states of (GaAs)m/(AlAs)n type-II short-period superlattices (SL) with m, n ⩽ 4, in order to determine their energy and symmetry. The symmetry is found from the shift and splitting of the levels under uniaxial stress, and from the no-phonon oscillator strengths determined by time-resolved PL. Our samples are found to be true superlattices obeying the optical selection rules predicted by the space group symmetry, which determines whether a transition is indirect or pseudo-direct. However, selection rules depending on parity with respect to reflection in the growth plane are not obeyed. The results are compared with theoretical calculations from the literature. When strain due to lattice mismatch is taken into account, the ordering of the levels is found to agree with the most recent calculations, except for the case m = n = 1. In this SL the lowest conduction band state is found to derive from the bulk X valley, rather than from the L valley as predicted. We confirm that this discrepancy can be resolved if there is an ordered interchange of a certain fraction of the Ga and Al atoms, and our data support the theoretical prediction that such an ordered intermixed SL may in fact be more stable than either the perfect SL or the random alloy.

Enhancement of the photoluminescence intensity in short-period GaAs/AlAs superlattices with different well and barrier thickness

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Luminescence Enhancement of Plasma-Etched InAsP∕InGaAsP Quantum Wells

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

Г-Г Photoluminescence from Type II Short-Period GaAs-AlAs Superlattices

Optical properties of delta-doped GaAs and GaAs/Al0.1Ga0.9As superlattices

Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

Effects of Algaas Cladding Layers on the Luminescence of Gaas/Gaas1-Xbix/Gaas Heterostructures

Electronic states in GaAs-AlAs short-period superlattices

Optical Properties of Δ-Doped GaAs and GaAs/Al 0.1 Ga 0.9 As Superlattices

Luminescent Properties of Annealed and Directly Wafer-Bonded InAsP/InGaAsP Multiple Quantum Wells

Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications

Effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice: a first-principles study

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

A coupled Raman-Brillouin study of direct and folded acoustic modes in long-period GaAsAlAs superlattices

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

Interband Transitions of InAs/AlAs Short-Period Superlattices Grown by Molecular Beam Epitaxy

Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method

Symmetry of the Lowest Conduction Band States in Very Short-Period GaAsAlAs Superlattices

Energy levels of very short‐period (GaAs)<sub><i>n</i></sub>‐(AlAs)<sub><i>n</i></sub>superlattices

Influence of illumination on the quantum lifetime in selectively doped single GaAs quantum wells with short-period AlAs/GaAs superlattice barriers