Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method

S. Botti,L.C. Andreani

DOI: https://doi.org/10.1103/PhysRevB.63.235313

2001-03-16

Abstract:The linear combination of bulk bands method recently introduced by Wang, Franceschetti and Zunger [Phys. Rev. Lett.78, 2819 (1997)] is applied to a calculation of energy bands and optical constants of (GaAs)$_n$/(AlAs)$_n$ and (GaAs)$_n$/(vacuum)$_n$ (001) superlattices with n ranging from 4 to 20. Empirical pseudopotentials are used for the calculation of the bulk energy bands. Quantum-confined induced shifts of critical point energies are calculated and are found to be larger for the GaAs/vacuum system. The $E_1$ peak in the absorption spectra has a blue shift and splits into two peaks for decreasing superlattice period; the $E_2$ transition instead is found to be split for large-period GaAs/AlAs superlattices. The band contribution to linear birefringence of GaAs/AlAs superlattices is calculated and compared with recent experimental results of Sirenko et al. [Phys. Rev. B 60, 8253 (1999)]. The frequency-dependent part reproduces the observed increase with decreasing superlattice period, while the calculated zero-frequency birefringence does not account for the experimental results and points to the importance of local-field effects.

Materials Science

What problem does this paper attempt to address?

The main problem that this paper attempts to solve is to explore the influence of quantum confinement effects on the electronic states and optical properties in GaAs/AlAs and GaAs/vacuum superlattices. Specifically, the author focuses on the following aspects:

1. **Energy changes of E1 and E2 transitions**: Study how the quantum confinement effect affects the energies of two important optical transitions, E1 (inter - band transition in the Γ - L direction) and E2 (mainly from transitions near the special point (3/4, 1/4, 1/4) in the Brillouin zone) in GaAs/AlAs and GaAs/vacuum superlattices, and explore the behaviors of these transitions under different superlattice periods.

2. **Blue - shift phenomenon**: Analyze the blue - shift phenomenon of the E1 peak in the absorption spectrum and its splitting into two peaks, especially the changes when the superlattice period decreases. At the same time, study the splitting phenomenon of the E2 transition in large - period GaAs/AlAs superlattices and the merging situation in small - period ones.

3. **Calculation of linear birefringence**: Calculate the linear birefringence of GaAs/AlAs superlattices and compare it with experimental results. In particular, study the influence of the change in electronic states caused by the quantum confinement effect on birefringence, without considering the inherent dielectric anisotropy caused by the difference in boundary conditions of the multilayer structure.

4. **Influence of surface states**: For GaAs/vacuum superlattices, study the appearance of surface states (i.e., states caused by dangling bonds) in the forbidden band and their contribution to low - energy transitions, and discuss how to simulate interface states or defects in actual systems by excluding surface states.

### Main research methods

To achieve the above goals, the author adopts the following methods:

- **Linear combination of body - band method (LCBB)**: Use this method to calculate the single - particle energy - band structure of superlattices by expressing the superlattice wave function as a linear combination of the body - state Bloch wave functions of the constituent materials.

- **Empirical pseudopotential method**: Used to calculate the energy - band structures of body states and superlattices to ensure the accuracy and efficiency of the calculation.

- **Calculation of dielectric function**: Based on the single - particle energy - band structure, use the semiclassical theory to calculate the real and imaginary parts of the complex dielectric function, thereby obtaining the absorption spectrum and other optical properties.

Through these methods, the author aims to reveal the specific influence of quantum confinement effects on the optical properties of semiconductor heterostructures and provide a theoretical basis for further research.