Abstract:We calculate the electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices within relativistic density functional theory. To have a good description of the electronic and optical properties, the modified Becke-Johnson exchange-correlation functional is pondered to correctly approximate the band gap. First, we analyze electronic and optical characteristics of bulk InAs and InSb, and then we investigate the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice. The optical gaps deduced from the imaginary part of the dielectric function are associated with the characteristic interband transitions. We investigate the electronic and optical properties of the InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattice with three lattice constants of the bulk InAs, GaSb and AlSb, respectively. It is observed that the electronic and optical properties strongly depend on the lattice constant. Our results support the presence of two heavy-hole bands with increasing in-plane effective mass as we go far from the Fermi level. We notice a considerable decrease in the energy gaps and the effective masses of the heavy-holes in the k$_x$-k$_y$ plane compared to the bulk phases of the parent compounds. We demonstrate that the electrons are s-orbitals delocalized in the entire superlattice, while the holes have mainly 5p-Sb character localized in the In(As,Sb) side of the superlattice. In the superlattice, the low-frequency absorption spectra greatly increase when the electric field is polarized orthogonal to the growth axis allowing the applicability of III-V compounds for the long-wavelength infrared detectors.

Electronic states and optical properties of GaAs/AlAs and GaAs/vacuum superlattices by the linear combination of bulk bands method

Electronic States in GaAs-AlAs Lateral-Surface Superlattices Produced by Deposition of AlAs and GaAs Fractional Layers on (001) Vicinal GaAs Substrates

Electronic Structures of Gaas/Alas Lateral Superlattices

Valence Band Structures of Gaas/Alas Lateral Superlattices

Electronic states in GaAs/AlAs lateral-surface superlattices

Electronic states in GaAs-AlAs short-period superlattices: energy levels and symmetry

Effects of stacking periodicity on the electronic and optical properties of GaAs/AlAs superlattice: a first-principles study

Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

Electronic Properties of Vacancy‐Induced Structures in AlAs/GaAs Superlattices

Electronic and optical properties of InAs/InAs$_{0.625}$Sb$_{0.375}$ superlattices and their application to far-infrared detectors

Electronic Band-Structure Engineering of GaAs/AlxGa1−xAs Quantum Well Superlattices with Substructures

Electronic states in GaAs-AlAs short-period superlattices

Optical Properties of Ordered and Randomly Disordered AlAs/GaAs Short-Period Superlattices.

Energy Subband Structures in Lateral-Surface Superlattices

Optical and transport properties of short period InAs/GaAs superlattices near quantum dot formation

Enhancement of the photoluminescence intensity in short-period GaAs/AlAs superlattices with different well and barrier thickness

Subband structures and intersubband optical transitions in lateral surface superlattices under electric fields

Interband Transitions of InAs/AlAs Short-Period Superlattices Grown by Molecular Beam Epitaxy

Optical Properties of GaAs/AlAs Superlattices with Randomly Distributed Layer Thicknesses.

Effect of high bandgap AlAs quantum barrier on electronic and optical properties of In0.70Ga0.30As/Al0.60In0.40As superlattice under applied electric field for laser and detector applications

Optical properties and band lineup in GaNxAs1-x/GaAs single quantum wells