Semiconductor Photoelastic Constants Measured by Light Scattering in Superlattices.

J HE,J SAPRIEL,H BRUGGER

DOI: https://doi.org/10.1103/physrevb.39.5919

1989-01-01

Abstract:The technique for the measurement of the photoelastic constants that is based on light scattering (Raman and Brillouin) by superlattice acoustic phonons is refined and applied to ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As and ${\mathrm{Si}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Ge}}_{\mathrm{x}}$ materials. The photoelastic constants of ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As with respect to GaAs and those of ${\mathrm{Si}}_{0.5}$${\mathrm{Ge}}_{0.5}$ with respect to Si are measured as a function of the wavelength of the laser excitation. One finds that the photoelastic constant of ${\mathrm{Ga}}_{1\mathrm{\ensuremath{-}}\mathrm{x}}$${\mathrm{Al}}_{\mathrm{x}}$As undergoes a nonlinear variation with the aluminum concentration x and that the ratio of the photoelastic constants of ${\mathrm{Si}}_{0.5}$${\mathrm{Ge}}_{0.5}$ and Si varies strongly as a function of laser wavelength.