Abstract:Semiconductor superlattices have been extensively investigated for thermoelectric applications, to explore the effects of compositions, interface structures, and lattice strain environments on the reduction of thermal conductivity, and improvement of efficiency. Most studies assumed that their electronic properties remain unaffected compared to their bulk counterparts. However, recent studies demonstrated that electronic properties of silicon (Si)/germanium (Ge) superlattices show significant variations depending on compositions and growth substrates. These studies used a constant relaxation time approximation, and ignored the effects of electron scattering processes. Here, we consider electron scattering with phonons and ionized impurities, and report first-principles calculations of electronic transport properties including the scattering rates. We investigate two classes of Si/Ge superlattices: superlattices with varied compositions grown on identical substrates and with identical compositions but grown on different substrates. We illustrate the relationship between the energy bands of the superlattices and the electron-phonon relaxation times. We model the electron-ionized impurity interaction potentials by accounting for the in-plane and the cross-plane structural anisotropy. Our analysis reveals that the inclusion of electron-phonon and electron-impurity scattering processes can lead to ~1.56-fold improved peak power-factors, compared to that of bulk Si. We observe that superlattices can also display dramatically reduced power-factors for specific lattice strain environments. Such reduction could cancel out thermoelectric efficiency improvements due to reduced thermal conductivities. Our study provides insight to predict variation of electronic properties due to changes in lattice strain environments, essential for designing superlattices with optimized electronic properties.

Electron mobility and energy relaxation rate in GaAs/GaAlAs superlattice

High Magnetic Field Studies Of Charged Exciton Localization In Gaas/Alxga1-Xas Quantum Wells

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

A Modelling study of Electron transport in GaN/AlGaN superlattices using Monte Carlo simulation

Ab initio Calculation of the Effective Thermal Conductivity Coefficient of a Superlattice Using the Boltzmann Transport Equation

Semiconductor Photoelastic Constants Measured by Light Scattering in Superlattices.

Theory of Light Scattering by Longitudinal-Acoustic Phonons in Superlattices.

Effect of Electron-Phonon and Electron-Impurity Scattering on Electronic Transport Properties of Silicon/Germanium Superlattices

Study of the Electron Mobility in InAs/GaSb Type II Superlattices at High Temperatures

Calculation of the effective thermal conductivity of a superlattice based on the Boltzmann transport equation using first-principle calculations

Effect of spontaneous superlattice ordering on the luminescence properties of the MOVPE grown AlGaAs/GaAs (100) heterostructure

Phonon Modes And Raman-Scattering In Gaas/Ga1-Xalxas

Phonon-limited electron mobility in Si, GaAs and GaP with exact treatment of dynamical quadrupoles

Influence of layer deformation on thermal quenching of exciton photoluminescence in short-period GaAs/AlAs superlattices

Drift mobility of long-living excitons in coupled GaAs quantum wells

Electron-interface Phonon Scattering in GaAs/Ga1-xAlxAs Quantum-Well Structures with Interface Roughness

A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs/GaSb type-II superlattices

Effective Phonon Dispersion and Low field transport in AlxGa1-xN alloys using supercells: An ab-initio approach

Simultaneous study of acoustic and optic phonon scattering of electrons and holes in undoped $\mathrm{GaAs}$/$\mathrm{Al_{x} Ga_{1-x} As}$ heterostructures

Electronic Structures of Gaas/Alas Lateral Superlattices

Lattice Dynamics of Gan/Aln Superlattices