Abstract:To effectively regulate thermal transport for the near-junction thermal management of GaN electronics, it is imperative to gain an understanding of the phonon characteristics of GaN nanostructures, particularly the topological phonon properties connected to low-dissipation surface phonon states. In this work, a comprehensive study on phonon modes and topological phonon properties is performed from first principles in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x (x=1,2,3) superlattices. Phonon modes, including the dispersion relation, density of states, and participation ratio, were calculated for six GaN superlattices. The participation ratio results did not reveal the localized phonon mode. In topological phonon analyses, it is found that Weyl phonons with a Chern number of 1(-1) are present in all six GaN superlattices, consisting of trivial (GaN) and nontrivial (AlN and AlGaN) combinations. These phonons are located on either side of the kz = 0 plane symmetrically in the Brillouin zone. With the increase in the number of phonon branches in superlattices, the number of Weyl phonon points also increases from dozens to hundreds. One Weyl phonon with significant and clean surface states is selected and analyzed for each GaN superlattice. Among them, the Weyl phonon in (GaN)2/(AlN)2 superlattice mainly results from the lattice vibrations of Al and Ga atoms, while the Weyl phonons in other superlattices mainly result from the lattice vibrations of N atoms. The Weyl phonons at opposite kz planes form pairs in (GaN)2/(AlN)2, AlGaN/GaN, and (AlGaN)2/(GaN)2. Effects of strain including biaxial and uniaxial strain on Weyl phonons in GaN/AlN and AlGaN/GaN superlattices are investigated. Results indicate that Weyl phonons persist in large strain states, however, no monoclinic trend is observed due to the accidental degeneracy of these superlattices.

Phonon Modes And Raman-Scattering In Gaas/Ga1-Xalxas

Coupled Brillouin-Raman Study of Direct and Folded Acoustic Modes in Gaas-Alas Superlattices

A coupled Raman-Brillouin study of direct and folded acoustic modes in long-period GaAsAlAs superlattices

Theory on the Optical-Phonon Raman Scattering in GaAs/AlAs Heterostructures

Acoustic Attenuation and Optical-Absorption Effects on Light Scattering by Acoustic Phonons in Superlattices.

Light Scattering by Superlattice Acoustic Modes at Critical Points of the Brillouin Zone

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Semiconductor Photoelastic Constants Measured by Light Scattering in Superlattices.

Theory of Light Scattering by Longitudinal-Acoustic Phonons in Superlattices.

Lattice dynamics of zinc-blende GaN and AIN: II. Superlattice phonons

Electron-interface Phonon Scattering in GaAs/Ga1-xAlxAs Quantum-Well Structures with Interface Roughness

Phonon modes and topological phonon properties in (GaN)x/(AlN)x and (AlGaN)x/(GaN)x superlattices

Lattice Dynamics of Gan/Aln Superlattices

Strain-Dependent Effects on Confinement of Folded Acoustic and Optical Phonons in Short-Period (XC)m/(YC)n with X,Y (≡Si, Ge, Sn) Superlattices

AlGaAs optical phonon replicas in the photoluminescence spectra of GaAs layer in an Al0.3Ga0.7As/GaAs heterostructure

Investigation on the Quantum-Well Structure of A Gaas/Al0.3ga0.7as Superlattice Grown on A Misoriented Substrate

Vibrational properties of Si/Ge superlattices

Abnormal Selection Rules of Interface Modes in Ultrathin GaAs/AlAs Superlattice

Vibration Spectra of Quasi-confined Optical Phonon Modes in an Asymmetric Wurtzite Al X Ga 1− X N/GaN/Al Y Ga 1− Y N Quantum Well

Electron mobility and energy relaxation rate in GaAs/GaAlAs superlattice

Full Optical Phonon States and Their Dispersive Spectra of a Wurtzite GaN/AlGaN Superlattice: Quantum Size Effect