Abstract:We have conducted As and Ga Nuclear Magnetic Resonance (NMR) experiments to investigate order/disorder in AlxGa1 xAs lift-off films with x B 0.297 and 0.489. We were able to identify all possible As(AlnGa4 n) sites with n = 0–4 coordinations in As NMR spectra using spin-echo experiments at 18.8 Tesla. This was achieved by employing high rf field strengths using a small solenoid coil and an NMR probe specifically designed for this purpose. Spectral deconvolution, using an evolutionary algorithm, complies with the absence of long-range order if a CuAu based order parameter is imposed. An unconstrained fit shows a deviation of the statistics imposed by this type of ordering. The occupational disorder in the Ga and Al positions is reflected in a distribution of the Electric Field Gradients (EFGs) experienced at the different arsenic sites. We established that this can be modelled by summing the effects of the first coordination sphere and a Czjzek type distribution resulting from the compositional variation in the Al/Ga sub-lattice in the higher coordination spheres. Ga 3QMAS and nutation data exclude the presence of highly symmetric sites and also show a distribution in EFG. The experimentally obtained quadrupolar interactions are in good agreement with calculations based on Density Functional Theory (DFT). Using additivity of EFG tensors arising from distant charge perturbations, we could use DFT to model the EFG distributions of the n = 0–4 sites, reproducing the Czjzek and extended Czjzek distributions that were found experimentally. On the basis of these calculations we conclude that the As quadrupolar interaction is sensitive to compositional modulations up to the 7th coordination shell in these systems.

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Resonant Raman Scattering with the E+ Band in a Dilute GaAs1−xNx Alloy (X=0.1%)

Phonon Modes And Raman-Scattering In Gaas/Ga1-Xalxas

Raman scattering study of In xGa 1-xN alloys with low indium compositions

Resonant Raman Scattering and Photoluminescence Emissions from above Bandgap Levels in Dilute GaAsN Alloys

A solid-state NMR and DFT study of compositional modulations in Al x Ga

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Raman Scattering Study of In <sub> <i>x</i> </sub> Ga <sub> 1− <i>x</i> </sub> N Alloys with Low Indium Compositions

Raman Studies of Phosphorus Incorporation in GaN1−xPx Alloys

Temperature-dependent Ultraviolet Raman Scattering and Anomalous Raman Phenomenon of AlGaN/GaN Heterostructure.

Effects of indium composition x and temperature on the raman phonon properties of InxGa1-x N alloys with high Indium composition

Strain-stress study of AlxGa1-xN/AlN heterostructures on c-plane sapphire and related optical properties

Dependence on Al Concentration of the Optical Phonons of AlxGa1−xN Films

Raman Scattering and Ferromagnetism of (ga, Mn)N Films Grown by MOCVD

Raman and Infrared Spectra Study of GaN1-xPx Ternary Alloys Grown by MOCVD

RAMAN SPECTROSCOPY STUDY ON LO PHONON-PLASMON COUPLED MODE IN GaN THIN FILMS

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Raman scattering spectra of GaN grown by MOCVD

Microstructures And Strain Relaxation In Modulation-Doped Alxga1-Xn/Gan Heterostructures

Raman scattering from ZnS1-xTex alloys grown on GaAs(100) by molecular beam epitaxy

Optical Study of Electronic States in Gaasn