Abstract:AlN, with its ultra-wide bandgap, is highly attractive for modern applications in deep ultraviolet light-emitting diodes and electronic devices. In this study, the surface and cross-sectional properties of AlN films grown on flat and nano-patterned sapphire substrates are characterized by a variety of techniques, including photoluminescence spectroscopy, high-resolution X-ray diffraction, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and Raman spectroscopy. The results indicate that different sapphire substrates have minimal impact on the photoluminescence spectrum of the epitaxial films. As the temperature increased, the radius of curvature of the AlN films increased, while the warpage decreased. The AlN films grown on nano-patterned substrates exhibited superior quality with less surface oxidation. During the growth of AlN thin films on different types of substrates, slight shifts in the energy bands occurred due to differences in the introduction of carbon-related impurities and intrinsic defects. The Raman shift and full width at half maximum (FWHM) of the E2(low), A1(TO), E2(high), E1(TO), and E1(LO) phonon modes for the cross-sectional AlN films varied with the depth and temperature. The stress state within the film was precisely determined with specific depths and temperatures. The FWHM of the E2(high) phonon mode suggests that the films grown on nano-patterned substrates exhibited better crystalline quality.

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Investigation of Temperature Dependent Optical Modes in GexAs35-xSe65 Thin Films: Structure Specific Raman, FIR and Optical Absorption Spectroscopy

Dependence on Al Concentration of the Optical Phonons of AlxGa1−xN Films

Temperature Characterization of Raman Scattering in an AlGaN/GaN Heterostructure

Temperature Dependence of Raman Scattering in GeSn Films

Molecular dynamics study on the dependence of thermal conductivity on size and strain in GaN nanofilms

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Temperature-dependent Ultraviolet Raman Scattering and Anomalous Raman Phenomenon of AlGaN/GaN Heterostructure.

Temperature Dependence of the First-Order Raman Scattering in Silicon Nanowires

Temperature-dependent Raman Scattering of Silicon Nanowires.

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

Raman Nanometrology of Graphene: Temperature and Substrate Effects

Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

Temperature Dependence of the Raman Spectra of Graphene and Graphene Multilayers

Microstructure and Physical Properties of GaN Films on Sapphire Substrates

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

Optical property studies of GaN films grown by MOCVD

Raman scattering spectra of GaN grown by MOCVD

Impact of Temperature and Substrate Type on the Optical and Structural Properties of AlN Epilayers: A Cross-Sectional Analysis Using Advanced Characterization Techniques