Abstract:A finite element model based on coupled field was established to analyze and design high quality GaN epilayers grown on Si substrate with thin variable composition graded Al x Ga 1-x N interlayers. Theoretical simulation shows that Al x Ga 1-x N interlayers can effectively reduce the tensile stress which generated in the cooling process between Si and GaN for thermal mismatch. When the Al x Ga 1-x N is single component, with the proportion of Al is larger, the thermal stress will decrease. In this case, the maximum stress reduces 13.8%, but the distribution uniformity of stress make worse. When the Al x Ga 1-x N is variable composition graded, the stress of GaN epilayers reduced significantly. Further analysis showed that bigger x at the lower interlayer (near the Si substrate) and smaller x at the upper interlayer (near the GaN epilayers) of Al x Ga 1-x N interlayers simultaneous can reduce the risk of cracks and make the GaN quality better. The calculation results show that without considering the effect of thermal mismatch and the lattice mismatch, before the experiments if we carefully design the interlayers structural through finite element model can effectively reduce the residual thermal stress. It is an effective way to save cost and time.

Determination of Temperature-Dependent Stress State in Thin AlGaN Layer of AlGaN/GaN HEMT Heterostructures by Near-Resonant Raman Scattering

Investigation on Thermo-Mechanical Responses in High Power Multi-Finger AlGaN/GaN HEMTs

Temperature dependence of strain in A1(X)Ga(1-X)N/GaN heterostructures

Effects of Surface/interface Stress on Phonon Properties and Thermal Conductivity in AlN/GaN/AlN Heterostructural Nanofilms

Impacts of diamond heat spreader on the thermo-mechanical characteristics of high-power AlGaN/GaN HEMTs

Thermal Stress Analysis and Structural Design of AlxGa1−xN/GaN Epilayers Based on Si Substrate

Temperature-dependent Ultraviolet Raman Scattering and Anomalous Raman Phenomenon of AlGaN/GaN Heterostructure.

Temperature dependence of strain in Al/sub x/Ga/sub 1-x/N/GaN heterostructures

High-Temperature Characteristics of Strain in AlGaN/GaN Heterostructures

Temperature dependence of strain in AlxGa1-xN/GaN heterostructures

Determination of Al Composition in Strained AlGaN Layers

Temperature dependence of the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN HFETs

Measurement of piezoresistance coefficient with different gate voltages of GaN HEMT micro-accelerometer

The Testing of Stress-Sensitivity in Heteroepitaxy GaN/Si by Raman Spectroscopy

Simulating Stress-Tunable Phonon and Thermal Properties in Heterostructured AlN/GaN/AlN-nanofilms

Temperature Characterization of Raman Scattering in an AlGaN/GaN Heterostructure

Temperature-Dependent Raman Scattering and Correlative Investigation of AlN Crystals Prepared Using a Physical Vapor Transport (PVT) Method

TEMPERATURE DEPENDENCE OF RELAXATION IN AlGaN/GaN HETEROSTRUCTURES

Effect of Stress on the Al Composition Evolution in AlGaN Grown Using Metal Organic Vapor Phase Epitaxy

Temperature Dependence of Raman Scattering in Single Crystal GaN Films

Ambient Temperature–Corrected Mechanical Stress Mapping of Gallium Nitride and Aluminum Indium Gallium Phosphide Films by Raman Scattering Spectroscopy for Characterization of Light‐Emitting Diodes