Abstract:The photoluminescence (PL) and photoluminescence excitation spectra (PLE) of selected InxGa1-xN samples grown by metal organic chemical vapor deposition (MOCVD) have been investigated, and the analysis of structural and optical behaviors has been taken to study the existence of the microstructure InGaN alloys on the basis of X-ray diffraction (XRD) and atomic force microscopy (AFM) measurements.XRD reveals that the sample is a single crystalline InxGa1-xN film formed predominantly in (0002) direction, the In mole composition x in InxGa1-xN film is calculated to be about 0.2 according to the Bragg's angle of InxGa1-xN (0002). The AFM plane-view and 3D images of the selected In0.2Ga0.8N sample show almost uniform island-like microstructure appearing to be composed of granular-crystalline in nanometer scale. The islands composed of the grapes-like have an average height of 10 nm at most and a mean size of 300 nm. The self-organized microstructure appeared to form cone and/or pyramid shape and tended to agglomerate island-like surface with RMS roughness about 10 nm, which attributed to Stranski-Krastanov growth mechanism. The comparison between PLE and PL under different exciting or monitoring energy allows determining the existence of wetting layer (WL)in the sample. The PLE and PL measurements show that the resonant absorption is related to the band gap and wetting layer of the alloy at different exciting and monitoring energy. It has been found that PLE peaks of the In0.2Ga0.8N alloy are dominated by 365 nm and 474 nm with monitoring wavelength 545 nm and 493 nm; the broad 545 nm and narrow 493 nm emission peaks are originated from In(Ga)N wetting layer and InGaN region respectively. The structural and optical analyses suggest that the origin of the exciton localization center is the self-formed islands. Hence, the irrelevancy of the PL spectra to the gap energy was explained in terms of fluctuation resulting from variations in grain size or shape. This type of localized center provides another physical model for the proposed localized states in InxGa1-xN epilayers. Further characterization of the InGaN systems is underway to help fully understand the correlation between the structural and the optical pro-perties of self-organized micro-structure of InGaN system.

Raman scattering spectra of GaN grown by MOCVD

Raman Scattering of GaN and Mg-doped GaN Films Grown by MOCVD

Raman and Infrared Spectra Study of GaN1-xPx Ternary Alloys Grown by MOCVD

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Optical property studies of GaN films grown by MOCVD

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Micro-Raman Scattering Study of Hexagonal InGaN Epitaxial Layer

Raman scattering probe of anharmonic effects due to temperature and compositional disorder in GaNxAs1−x

The morphology and optical characterizations of AlGaN/GaN based on Al 2O3 prepared by MOCVD

Growth studies of m -GaN layers on LiAlO 2 by MOCVD

Study on Raman scattering spectroscopy of Mn-doped GaN grown by the ammonothermal method

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Structural and optical characterization of GaN films grown by metalorganic chemical vapor deposition

Raman Scattering and Ferromagnetism of (ga, Mn)N Films Grown by MOCVD

Investigation on Optical and Micro-structural Properties of Inx Ga1-x N Alloys Grown by MOCVD

Stress Study of GaN Grown on Serpentine-Channels Masked Si(111) Substrate by MOCVD

Raman scattering study of GaN nanostructures obtained by bottom-up and top-down approaches

Optical and Structural Properties of Mn-Doped GaN Grown by Metal Organic Chemical Vapour Deposition

Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

Al Incorporation, Structural and Optical Properties of AlxGa1−xN (0.13⩽x⩽0.8) Alloys Grown by MOCVD