Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Raman scattering study of GaN nanostructures obtained by bottom-up and top-down approaches

Anticrossing of Axial and Planar Surface-Related Phonon Modes in Raman Spectra of Self-Assembled Gan Nanowires

Raman Spectroscopy of Nanocrystalline Gan Synthesized by Arc Plasma

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Raman scattering spectra of GaN grown by MOCVD

Raman Spectroscopy and Structure of Crystalline Gallium Phosphide Nanowires.

Microstructure and Micro-Raman Studies of Nitridation and Structure Transition of Gallium Oxide Nanowires

X-ray scattering study of GaN nanowires grown on Ti/Al$_{2}$O$_{3}$ by molecular beam epitaxy

Micro-Raman investigation of GaN nanowires prepared by direct reaction Ga with NH3

Raman Scattering Studies of Individual Polar Semiconducting Nanowires: Phonon Splitting and Antenna Effects

Morphologies of one-dimensional GaN nanostructures grown through technology

Synthesis of single crystalline GaN nanoribbons on sapphire (0001) substrates

Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations

In situ resonant x-ray study of vertical correlation and capping e ects during GaN/AlN quantum dots growth

Optical, Structural, and Nuclear Scientific Studies of AlGaN with High Al Composition

Raman Scattering and X-Ray Diffraction Study of Neutron Irradiated GaN Epilayers

Raman Investigation on the Surface Carrier Concentration of Single GaN Microrod Grown by MOCVD

Gan Layers on Si (111) from Nanocolumns to Nanorods by Plasma-Assisted Molecular Beam Epitaxy

RAMAN SPECTROSCOPY STUDY ON LO PHONON-PLASMON COUPLED MODE IN GaN THIN FILMS

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy