Abstract:Well-aligned GaN nanowires are promising candidates for building high-performance optoelectronic nanodevices. In this work, we demonstrate the epitaxial growth of well-aligned GaN nanowires on a [0001]-oriented sapphire substrate in a simple catalyst-assisted chemical vapor deposition process and their alignment control. It is found that the ammonia flux plays a key role in dominating the initial nucleation of GaN nanocrystals and their orientation. Typically, significant improvement of the GaN nanowire alignment can be realized at a low NH3 flow rate. X-ray diffraction and cross-sectional scanning electron microscopy studies further verified the preferential orientation of GaN nanowires along the [0001] direction. The growth mechanism of GaN nanowire arrays is also well studied based on cross-sectional high-resolution transmission electron microscopy (HRTEM) characterization and it is observed that GaN nanowires have good epitaxial growth on the sapphire substrate following the crystallographic relationship between (0001)GaN∥(0001)sapphire and (101[combining macron]0)GaN∥(112[combining macron]0)sapphire. Most importantly, periodic misfit dislocations are also experimentally observed in the interface region due to the large lattice mismatch between the GaN nanowire and the sapphire substrate, and the formation of such dislocations will favor the release of structural strain in GaN nanowires. HRTEM analysis also finds the existence of "type I" stacking faults and voids inside the GaN nanowires. Optical investigation suggests that the GaN nanowire arrays have strong emission in the UV range, suggesting their crystalline nature and chemical purity. The achievement of aligned GaN nanowires will further promote the wide applications of GaN nanostructures toward diverse high-performance optoelectronic nanodevices including nano-LEDs, photovoltaic cells, photodetectors etc.

Growth mechanisms of GaN/GaAs nanostructures by droplet epitaxy explained by complementary experiments and simulations

Growth Mechanisms of GaN/GaAs Nanostructures by Droplet Epitaxy Explained by Complementary Experiments and Simulations

High-temperature growth of GaN nanowires by molecular beam epitaxy: toward the materials quality of bulk GaN

Defect-pit-assisted Growth of GaN Nanostructures: Nanowires, Nanorods and Nanobelts

Microscopic Study of Submonolayer Nucleation Characteristics During GaN (0001) Homoepitaxial Growth

Catalytic Growth of Gallium Nitride Nanowires on Wet Chemically Etched Substrates by Chemical Vapor Deposition

The Investigation of Molecular Beam Epitaxy Growth of GaN by Molecular Dynamics Simulation

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Selective area growth of GaN nanowires and nanofins by molecular beam epitaxy on heteroepitaxial diamond (001) substrates

Nucleation-Limited Kinetics of GaAs Nanostructures Grown by Selective Area Epitaxy: Implications for Shape Engineering in Optoelectronics Devices

Synthesis of gallium nitride nanostructures by nitridation of electrochemically deposited gallium oxide on silicon substrate

Synthesis and Properties of GaN Nanostructures

Molecular-beam-epitaxy Growth of GaN on GaAs(100) by Using Reactive Nitrogen Source

Droplet Controlled Growth Dynamics in Plasma-Assisted Molecular Beam Epitaxy of In(Ga)N Materials

Understanding the Growth Mechanism of GaN Epitaxial Layers on Mechanically Exfoliated Graphite.

Growth mechanisms in molecular beam epitaxy for GaN-(In,Ga)N core-shell nanowires emitting in the green spectral range

The Chemistry of GaN Growth

Alignment Control and Atomically-Scaled Heteroepitaxial Interface Study of GaN Nanowires.

Self-regulated radius of spontaneously formed GaN nanowires in molecular beam epitaxy

Preparation and properties of GaN nanostructures by post-nitridation technique

Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures