Abstract:Three kinds of ex situ low-temperature AlN (LT-AlN) templates grown on Si substrates by pulsed laser deposition (PLD) are employed to grow GaN epitaxial films by metal organic chemical vapor deposition (MOCVD). The single-crystalline ex situ LT-AlN template with smooth surface shows the greatest advantage to achieve high-quality GaN epitaxial films. It can effectively promote the lateral growth of high-temperature AlN layer to obtain coalesced and smooth surface, and therefore reduce the GaN nucleation energy barrier to facilitate GaN nucleation process. The as-grown truncated GaN nuclei with large sizes and low density are favorable for the two-dimensional growth of GaN. The ∼1.5 μm-thick GaN epitaxial film grown on this ex situ LT-AlN template shows a flat surface and the best crystalline quality with the minimum full-width at half maximums (FWHMs) of GaN(0002) and GaN(10–12) X-ray rocking curves (XRCs) as 504 and 566 arcsec, respectively, and the minimum FWHM of near band emission peak as 20.62 nm. According to the XRC results, compared with the GaN film grown without ex situ LT-AlN templates, the screw-type threading dislocations (TDs) density, edge- and mixed-type TDs density in as-grown GaN film are greatly reduced by 20% and 49%, respectively, proving the superiority of ex situ LT-AlN template. This work is instructional for the growth of high-quality nitride films by combination methods, and significant for achieving high-performance GaN-based devices.

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Atomistic Study of GaN Surface Grown on Si(111)

Atomistic Investigation Of Various Gan (0001) Phases On The 6h-Sic (0001) Surface

Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy

Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

N-Plasma Assisted Molecular Beam Epitaxy of GaN(0001̄) Thin Films on 6H-Sic(0001̄)

Stm Study of the Ga Thin Films Grown on Si(111) Surface

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Stm Study of Ag Film Initial Stages Growth on A Gan(0001) Surface Grown by Mbe

Surface and Interface Studies of Gan Epitaxy on Si(111) Via Zrb2 Buffer Layers

Epitaxial Growth and Characterization of Gan Films on (001) Gaas Substrates by Radio-Frequency Molecular Beam Epitaxy

Structures of GaN(0001)-(2 × 2), -(4 × 4), and -(5 × 5) surface reconstructions

N-Plasma Assisted Molecular Beam Epitaxy of Gan(000(1)Over-Bar) Thin Films on 6H-Sic(000(1)over-bar)

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures

Growth Mode and Surface Reconstruction of Gan(000(1)Over-Bar) Thin Films on 6H-Sic(000(1)over-bar)

Nitride Semiconductor Surfaces. Atomic Structures of GaN(0001) Reconstructed Surfaces. Approach Using First-Principles Simulation and STM Measurement.

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Growth mechanisms of GaN epitaxial films grown on ex situ low-temperature AlN templates on Si substrates by the combination methods of PLD and MOCVD

STRUCTURAL PROPERTIES OF GaN FILMS GROWN ON THE 6H-Sic(0001)$(\sqrt{3}\times \sqrt{3})r30^\circ$ SUBSTRATE