Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Scanning tunneling microscopy studies of III-nitride thin film heteroepitaxial growth

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Initial Stages of Cubic GaN Growth on the GaAs(001) Surface Studied by Scanning Tunneling Microscopy

Influence of Nitridation on III-nitride Films Grown on Graphene/quartz Substrates by Plasma-Assisted Molecular Beam Epitaxy

Scanning Tunneling Microscopy of III-V Compound Semiconductor (001) Surfaces

Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

In Situ Scanning Tunneling Microscopy Studies of the Evolution of Surface Morphology and Microstructure in Epitaxial TiN(001) Grown by Ultra-High-vacuum Reactive Magnetron Sputtering

Molecular Beam Epitaxy Growth of Scandium Nitride on Hexagonal SiC, GaN, and AlN

Electron cyclotron resonance plasma enhanced metalorganic chemical vapor deposition system with monitoring in situ for epitaxial growth of group-III nitrides

Atomistic Study of GaN Surface Grown on Si(111)

Surface and Interface Studies of Gan Epitaxy on Si(111) Via Zrb2 Buffer Layers

Growth of SiC and III–V nitride thin films via gas-source molecular beam epitaxy and their characterization

ScAlInN/GaN Heterostructures Grown by Molecular Beam Epitaxy

Scanning Probe Microscopy: Present Status and New Development. Scanning Tunneling Microscopy Study of GaAs(001) Surfaces (II).

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Group-III nitride heteroepitaxial films approaching bulk-class quality

Epitaxial growth and characterisation of nonpolar m-plane GaN on LaAlO3 substrate

Interfacial Modulated Lattice-Polarity-Controlled Epitaxy of III-Nitride Heterostructures on Si(111)

Growth of GaN Quasi‐substrates by Hydride Vapor Phase Epitaxy

Epitaxy of III-nitrides on Two-Dimensional Materials and Its Applications

Kinetic Monte Carlo simulations of GaN homoepitaxy on c- and m-plane surfaces