Abstract:GaN on Si plays an important role in the integration and promotion of GaN-based wide-gap materials with Si-based integrated circuits (IC) technology. A series of GaN film materials were grown on Si (111) substrate using a unique plasma assistant molecular beam epitaxy (PA-MBE) technology and investigated using multiple characterization techniques of Nomarski microscopy (NM), high-resolution X-ray diffraction (HR-XRD), variable angular spectroscopic ellipsometry (VASE), Raman scattering, photoluminescence (PL), and synchrotron radiation (SR) near-edge X-ray absorption fine structure (NEXAFS) spectroscopy. NM confirmed crack-free wurtzite (w-) GaN thin films in a large range of 180–1500 nm. XRD identified the w- single crystalline structure for these GaN films with the orientation along the c-axis in the normal growth direction. An optimized 700 °C growth temperature, plus other corresponding parameters, was obtained for the PA-MBE growth of GaN on Si, exhibiting strong PL emission, narrow/strong Raman phonon modes, XRD w-GaN peaks, and high crystalline perfection. VASE studies identified this set of MBE-grown GaN/Si as having very low Urbach energy of about 18 meV. UV (325 nm)-excited Raman spectra of GaN/Si samples exhibited the GaN E2(low) and E2(high) phonon modes clearly without Raman features from the Si substrate, overcoming the difficulties from visible (532 nm) Raman measurements with strong Si Raman features overwhelming the GaN signals. The combined UV excitation Raman–PL spectra revealed multiple LO phonons spread over the GaN fundamental band edge emission PL band due to the outgoing resonance effect. Calculation of the UV Raman spectra determined the carrier concentrations with excellent values. Angular-dependent NEXAFS on Ga K-edge revealed the significant anisotropy of the conduction band of w-GaN and identified the NEXAFS resonances corresponding to different final states in the hexagonal GaN films on Si. Comparative GaN material properties are investigated in depth.

Surface and Interface Studies of Gan Epitaxy on Si(111) Via Zrb2 Buffer Layers

Atomistic Study of GaN Surface Grown on Si(111)

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Stm Study of Controlling Heteroepitaxial Growth of Nitride Semiconductor Films on an Atomic Scale

Microstructural and Compositional Characteristics of GaN Films Grown on a ZnO-buffered Si (111) Wafer.

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Microstructures Of Gan Films Laterally Overgrown On Si(111) By Hydride Vapour Phase Epitaxy

Imaging wurtzite GaN surfaces by molecular beam epitaxy-scanning tunneling microscopy

N-Plasma Assisted Molecular Beam Epitaxy of Gan(000(1)Over-Bar) Thin Films on 6H-Sic(000(1)over-bar)

Infrared Reflectance Analysis of Gan Epitaxial Layers Grown on Sapphire and Silicon Substrates

Growth Mode and Surface Reconstruction of Gan(000(1)Over-Bar) Thin Films on 6H-Sic(000(1)over-bar)

Epitaxial Growth Of Wurtzite Gan On Si(111) By A Vacuum Reactive Evaporation

Optical, Structural, and Synchrotron X-ray Absorption Studies for GaN Thin Films Grown on Si by Molecular Beam Epitaxy

Microstructures of GaN Buffer Layers Grown on Si(111) Using Rapic Thermal Process Low-Pressure Metalorganic Chemical Vapor Deposition

N-Plasma Assisted Molecular Beam Epitaxy of GaN(0001̄) Thin Films on 6H-Sic(0001̄)

A new approach to epitaxially grow high-quality GaN films on Si substrates: the combination of MBE and PLD

STRUCTURAL PROPERTIES OF GaN FILMS GROWN ON THE 6H-Sic(0001)$(\sqrt{3}\times \sqrt{3})r30^\circ$ SUBSTRATE

Study of InN/GaN interfaces using molecular dynamics

PEALD-deposited crystalline GaN films on Si (100) substrates with sharp interfaces