STRUCTURAL PROPERTIES OF GaN FILMS GROWN ON THE 6H-Sic(0001)$(\sqrt{3}\times \sqrt{3})r30^\circ$ SUBSTRATE

Xianqi Dai,Huasheng Wu,Sheng Xu,Maohai Xie,S. Y. Tong
DOI: https://doi.org/10.1142/s0218625x04005937
2004-01-01
Surface Review and Letters
Abstract:Ab initio total energy calculations are performed to determine the interface structure of GaN films grown on the 6H - SiC (0001)[Formula: see text] substrate. The results show that the GaN film is of the wurtzite structure and has the Ga-polarity. It is also shown that stacking mismatch boundaries (SMBs) caused by the coalescence of GaN islands grown on stepped terraces of the 6H - SiC (0001) surface may be removed by stacking faults as the film grows. The types of SMBs on a stepped 6H - SiC (0001) surface are discussed.
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