Abstract:Gallium nitride (GaN) films homo-epitaxially grown on GaN/sapphire templates and free standing GaN substrates by plasma-assisted molecular beam epitaxy (PA-MBE) have been investigated. After optimizations of growth temperature, the Ga/N flux ratio, surface preparation as well as initial growth process, the high quality MBE-GaN films were obtained. Combined with X-ray diffraction (XRD) and transmission electron microscopy (TEM) measurements, the TD densities were measured similar to 4.2 x 10(8) cm(-2) and similar to 5 x 10(5) cm(-2) for MBE-grown GaN films grown on GaN/sapphire templates and free standing GaN substrates, respectively. The observations of TEM prove the clear interface and well-arranged atomic lattice between substrates and as-grown layers. Besides, a flat and smooth surface with step-flow growth mode is observed by atomic force microscopy (AFM). Photoluminescence (PL) measurements exhibit that the linewidth for free excitons is as narrow as 4 meV at low temperature of 8K and the deep level related yellow band emission similar to 550 nm have been effectively suppressed at room temperature. The process optimization and obtained results give us wide latitude to fabricate high performance devices with lower tolerance to dislocation density.

Film and interface of heteroepitaxial cubic GaN on (001) GaAs substrates

Epitaxiall Growth of Cubic and Hexagonal Gan Films on Gaas(001) Substrates by Mbe

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

Electron microscopy analysis of GaN/GaAs cubic heterostructure grown by MBE

Heteroepitaxy of GaN by using an ionized N source

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Epitaxial growth of GaN film on Si substrate

X-ray diffraction reciprocal space and pole figure characterization of cubic GaN epitaxial layers grown on (0 0 1) GaAs by molecular beam epitaxy

Structural Properties of GaN(0001) Epitaxial Layers Revealed by High Resolution X-ray Diffraction

Homo-epitaxial Growth of High Crystal Quality GaN Thin Films by Plasma Assisted–molecular Beam Epitaxy

X-Ray Diffraction Reciprocal Space And Pole Figure Characterization Of Cubic Gan Epitaxial Layers Grown On (001) Gaas By Molecular Beam Epitaxy

Molecular Beam Epitaxy Growth of Gaas on an Offcut Ge Substrate

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on sapphire substrates

Microstructures of GaN films grown by low pressure metal-organic vapor phase epitaxy on (0 1 1 2) sapphire substrates

Rutherford backscattering and channeling study of heteroepitaxial GaN and its ternary alloy

Interfaces in heterostructures of AlInGaN/GaN/ Al2O3

Anisotropic Defect Structure of GaN Film Grown by MOCVD

Atomically-Flat GaAs (001) Surface Achieved by Atomic-Hydrogen Treatment and MBE Growth of Purely Cubic-Phase GaN

Properties of GaN film grown by hydride vapor phase epitaxy

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate