Abstract:High-quality GaN-based light emitting diode (LED) wafers on La0.3Sr1.7AlTaO6 (LSAT) (111) substrates have been demonstrated by molecular beam epitaxy (MBE) for the first time. The structural properties and optoelectronic properties of as-grown LED wafers have been characterized by high-resolution X-ray diffraction (HRXRD), high-resolution transmission electron microscopy (HRTEM), scanning electron microscopy (SEM), atomic force microscopy (AFM), photoluminescence (PL), and electroluminescence (EL). The small full-width at half-maximum (FWHM) values for both symmetric (0002) and asymmetric (10 (1) over bar2) HRXRD rocking curves indicate that LED wafers on LSAT (111) substrates are of high crystalline quality, the clear and pronounced Pendellosung fringes of XRD from as-grown multiple quantum wells (MQWs) suggest abrupt InGaN/GaN interfaces with designed layer periodicity and the well controlled composition and thickness of each barrier and well layer with the MQWs, which has also been confirmed by HRTEM characterization. The XRD reciprocal space map (RSM) of the (10 (1) over bar5) plane was used to further study the stress state in GaN-based LED wafers. AFM reveals high quality surface morphology for the GaN-based LED wafers on LSAT substrates, with a root-mean-square (RMS) roughness of 1.6 nm. The PL spectrum shows the band edge emission at 445 nm with a FWHM of 24.0 nm. The EL edge emission is observed at 448 nm with a FWHM of 22.6 nm at an injection current of 20 mA, with the light output power of 4.3 mW and the forward voltage of 3.18 V for the chip size of 300 x 300 mu m(2), indicating good optoelectronic properties of as-grown GaN-based LEDs on LSAT substrates. This achievement reveals the tremendous potential of GaN-based LEDs on LSAT (111) for optoelectronic device applications.

Investigation on the Structural Properties of Gan Films Grown on La0.3sr1.7altao6 Substrates

Achieve High-Quality GaN Films on La0.3Sr1.7AlTaO6 (LSAT) Substrates by Low-Temperature Molecular Beam Epitaxy

Quality-enhanced GaN Epitaxial Films Grown on (la, Sr) (al, Ta)O3 Substrates by Pulsed Laser Deposition

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Growth and Characterization of Gan-Based Led Wafers on La0.3sr1.7altao6 Substrates

The Effect of Gan Single Crystal Substrate Characteristics on Homo-Epitaxial Gan Films

Epitaxial Growth and Characterization of Gan Films on (001) Gaas Substrates by Radio-Frequency Molecular Beam Epitaxy

Highly-efficient GaN-based light-emitting diode wafers on La 0.3 Sr 1.7 AlTaO 6 substrates

Investigation of GaN layer grown on Si(1 1 1) substrate using an ultrathin AlN wetting layer

Highly-efficient GaN-based light-emitting diode wafers on La 0.3 Sr 1.7 AlTaO6 substrates

Growth and Electron Microscopy Study of Gan/Mgal2o4 Heterostructures

Achieve High-Quality Ingan/Gan Multiple Quantum Wells on La0.3sr1.7altao6 Substrates

Synthesis Of Homogeneous And High-Quality Gan Films On Cu(111) Substrates By Pulsed Laser Deposition

Low-temperature growth of high-quality a-plane GaN epitaxial films on lattice-matched LaAlO3 substrates

Investigation Of Preparation And Properties Of Epitaxial Growth Gan Film On Si(111) Substrate

Structural and Optical Properties of Gan Materials Grown on Si by Metalorganic Chemical Vapor Deposition

Epitaxial Growth and Its Mechanism of Gan Films on Nitrided Ligao2(001) Substrates by Pulsed Laser Deposition

Study on Growing Thick AlGaN Layer on C-Plane Sapphire Substrate and Free-Standing GaN Substrate

Improved Crystal Quality of Gan Film with the In-Plane Lattice-Matched In0.17al0.83n Interlayer Grown on Sapphire Substrate Using Pulsed Metal Organic Chemical Vapor Deposition

Characteristics of the Crystalline and Luminescence Properties of A-Plane GaN Films Grown on \Gamma-Lialo2 (302) Substrates

The growth and characterization of GaN grown on an Al2O3 coated (0 0 1) Si substrate by metalorganic vapor phase epitaxy