Abstract:The microstructure, optical absorption ties and luminescence function of GaN thin films grown on the sapphire substrate with the buffer layer of GaN by metal-organic chemical vapor deposition (MOCVD) have been studied by means of X-ray diffraction (XRD), transmission electron microscopy (TEM), infrared transmission spectrum, ultraviolet-visible absorption spectrum and photoluminescence. XRD results show that the crystal structure of GaN is hexagonal wurtzite structure. The thin films have preferred orientation in c axis with very high quality. TEM images of the cross-sectional specimen show that the thickness of every layer in the superlattice are uniform with the average period of 13.3 nm, but there are high-density dislocations in the superlattices region. From related optical experimental data, it is found that optical absorption edge is at about 370 nm. The theory calculation indicates that the five samples are direct transition semiconductor and band-gaps are about 3.4 eV. The refractive indexes of the samples increase with photon energy enhancing and decrease with the wavelength increasing. The results show that the extinction coefficients reach the lowest point at 370 nm. Photoluminescence test results show that superlattice has preferable luminescence property. In addition, the yellow luminescence is found in all samples. © 2005 Trans Tech Publications, Switzerland.

Characteristics of the Crystalline and Luminescence Properties of A-Plane GaN Films Grown on \Gamma-Lialo2 (302) Substrates

Characteristics of the crystalline and luminescence properties of a-plane GaN films grown on γ-LiAlO_2(302) substrates

Anisotropic Characteristics of A-Plane GaN Films Grown on Γ-Lialo2 (302) Substrates by MOCVD

Nonpolar a-plane GaN films grown on γ-LiAlO2 (302) substrates by low-pressure MOCVD

Nonpolar A-Plane Gan Films Grown On Gamma-Lialo2 (3 0 2) Substrates By Low-Pressure Mocvd

Characterization of Crystal Lattice Constant and Dislocation Density of Crack-Free GaN Films Grown on Si(1 1 1)

The Nature of Crystalline Defects in A-Plane Gan Films

Nonpolar a-plane GaN films grown on γ-LiAlO2 (3 0 2) substrates by low-pressure MOCVD

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Investigation on the Structural Properties of Gan Films Grown on La0.3sr1.7altao6 Substrates

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on ?-LiAlO2

Microstructures and optical characteristics of AlGaN/GaN based on Al2O3 prepared by MOCVD

Luminescence of A Gan Grain with A Nonpolar and Semipolar Plane in Relation to Microstructural Characterization

Epitaxial growth and characterisation of nonpolar m-plane GaN on LaAlO3 substrate

Structural and Optical Properties of Nonpolar m-Plane GaN and GaN-Based LEDs on γ-LiAlO <sub>2</sub>

Particular Electrical Quality of A-Plane Gan Films Grown on R-Plane Sapphire by Metal-Organic Chemical Vapor Deposition

The morphology and optical characterizations of AlGaN/GaN based on Al 2O3 prepared by MOCVD

X-ray Diffraction, Photoluminescence and Secondary Ion Mass Spectroscopy Study of GaN Films Grown on Si(111) Substrate by Vacuum Reactive Evaporation

Structure and Luminescence of A-Plane GaN on R-Plane Sapphire Substrate Modified by Si Implantation*