Abstract:Properties of unintentionally-doped GaN re-grown on molecular beam epitaxy grown AlN/Sapphire templates by metal organic vapor phase epitaxy (MOVPE) are studied in this article. X-ray diffraction (XRD), transmission electron microscope (TEM), and atomic force microscope are used to investigate the influence of the crystal quality and surface morphology of AlN on the GaN. It is found that when surface roughness of AlN is small, the GaN has a full width at half maximum (FWHM) values of XRD rocking curves (200—300 and 400—500 arcsec for (002) and (102) plane ω-scan, respectively) and surface roughness (0.1—0.2 nm), which are comparable to those grown on sapphire substrates by using "two-step" method, although the FWHMs of (102) plane XRD ω-scan curves of AlN are 900—1500 arcsec. The reason for dislocation reduction in GaN shown by TEM image is that a part of dislocations in AlN are eliminated in the interface between AlN and GaN. This is probably due to the lattice restoration from Ga atoms for their large size. On the other hand, when surface roughness of AlN is large, the surface migration of Ga atoms is nestricted during the MOVPE growth, which results in a poor GaN quality. Moreover, the resistivity of GaN confirmed with Van der Pauw method is between 105 and 106 Ω ·cm, which is about six orders of magnitude higher than that in GaN grown on sapphire substrates. This is attributed to the replacement of low temperature GaN buffer layer by the AlN.

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In-Plane Optical Anisotropy of A-Plane Gan Film on R-Plane Sapphire Grown by Metal Organic Chemical Vapour Deposition

Study on a-Plane GaN Thin Films Growth by MOCVD and Its r-Plane Anisotropy

Growth of Nonpolar A-Plane GaN on Nano-Patterned R-Plane Sapphire Substrates

Crystalline Orientation and Anisotropy of Semi-Polar Gan Films Grown on M-Sapphire Substrate by Hydride Vapor Phase Epitaxy

Structural and Optical In-Plane Anisotropy of M-Plane GaN

Synthesis and Characterization of Heteroepitaxial Gan Films on Si(111)

Structural and Optical Investigation of GaN Grown by Metal-Organic Chemical Vapor Deposition

Optical Anisotropic Properties of M-Plane GaN Film Grown by Metalorganic Chemical Vapor Deposition

Anisotropic Crystallographic Properties, Strain, and Their Effects on Band Structure of M-Plane Gan on Lialo2(100)

Non-polar A-Plane ZnO Films Grown on R-Al2o3 Substrates Using GaN Buffer Layers

Study of (112̄0) non polar a-plane GaN on the (11-02) r-plane sapphire

Analysis of the Anisotropy in Anm-Plane GaN Film Via HVPE on a Γ-Lialo2substrate

Crystalline Anisotropy of Β-Ga2o3 Thin Films on a C-Plane GaN Template and a Sapphire Substrate

Gan Grown on Ain/Sapphire Templates

Growth of A-Plane Inn on R-Plane Sapphire with A Gan Buffer by Molecular-Beam Epitaxy

Analysis of the Anisotropy in an M-Plane Gan Film Via Hype on A Gamma-Lialo2 Substrate

Impact of c - and m - sapphire plane orientations on the structural and electrical properties of β-Ga 2 O 3 thin films grown by metal-organic chemical vapor deposition

Properties of GaN film grown by hydride vapor phase epitaxy

Effects of V/III Ratio on the Growth of a -Plane GaN Films